Ion implantation induced damage accumulation studied by Rutherford Backscattering Spectrometry and Spectroscopic Ellipsometry

T. Lohner, N. Q. Khánh, P. Petrik, M. Fried, E. Kótai, J. Gyulai

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this study, the damage created by ion implantation Of N2+ ions into single crystalline silicon is characterised using Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE). Samples were implanted with ion energy of 400 keV to create surfacedamaged layer and buried disorder. High-depth-resolution RBS combined with channeling has been used to examine the surface damage. For the analysis of ellipsometry data we applied the method of assuming appropriate optical model and fitting the model parameters (thickness of surface oxide and damaged silicon layer and the volume fraction of amorphous silicon component in the partially damaged layer). The thickness of the disordered surface layer was extracted from the high photon energy range of the ellipsometric spectra, the buried disorder was studied by evaluating the interference oscillations of the low photon energy range of the spectra. The optical model construction was independently checked by RBS experiments.

Original languageEnglish
Pages (from-to)229-232
Number of pages4
JournalMaterials Science Forum
Volume248-249
Publication statusPublished - 1997

Fingerprint

Spectroscopic ellipsometry
Rutherford backscattering spectroscopy
Ion implantation
Spectrometry
ellipsometry
ion implantation
backscattering
Silicon
damage
Photons
disorders
Ions
spectroscopy
Ellipsometry
photons
silicon
Amorphous silicon
Oxides
amorphous silicon
energy

Keywords

  • Damage Characterization
  • Ion Implantation
  • Rutherford Backscattering Spectrometry
  • Spectroscopic Ellipsometry

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

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abstract = "In this study, the damage created by ion implantation Of N2+ ions into single crystalline silicon is characterised using Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE). Samples were implanted with ion energy of 400 keV to create surfacedamaged layer and buried disorder. High-depth-resolution RBS combined with channeling has been used to examine the surface damage. For the analysis of ellipsometry data we applied the method of assuming appropriate optical model and fitting the model parameters (thickness of surface oxide and damaged silicon layer and the volume fraction of amorphous silicon component in the partially damaged layer). The thickness of the disordered surface layer was extracted from the high photon energy range of the ellipsometric spectra, the buried disorder was studied by evaluating the interference oscillations of the low photon energy range of the spectra. The optical model construction was independently checked by RBS experiments.",
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T1 - Ion implantation induced damage accumulation studied by Rutherford Backscattering Spectrometry and Spectroscopic Ellipsometry

AU - Lohner, T.

AU - Khánh, N. Q.

AU - Petrik, P.

AU - Fried, M.

AU - Kótai, E.

AU - Gyulai, J.

PY - 1997

Y1 - 1997

N2 - In this study, the damage created by ion implantation Of N2+ ions into single crystalline silicon is characterised using Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE). Samples were implanted with ion energy of 400 keV to create surfacedamaged layer and buried disorder. High-depth-resolution RBS combined with channeling has been used to examine the surface damage. For the analysis of ellipsometry data we applied the method of assuming appropriate optical model and fitting the model parameters (thickness of surface oxide and damaged silicon layer and the volume fraction of amorphous silicon component in the partially damaged layer). The thickness of the disordered surface layer was extracted from the high photon energy range of the ellipsometric spectra, the buried disorder was studied by evaluating the interference oscillations of the low photon energy range of the spectra. The optical model construction was independently checked by RBS experiments.

AB - In this study, the damage created by ion implantation Of N2+ ions into single crystalline silicon is characterised using Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE). Samples were implanted with ion energy of 400 keV to create surfacedamaged layer and buried disorder. High-depth-resolution RBS combined with channeling has been used to examine the surface damage. For the analysis of ellipsometry data we applied the method of assuming appropriate optical model and fitting the model parameters (thickness of surface oxide and damaged silicon layer and the volume fraction of amorphous silicon component in the partially damaged layer). The thickness of the disordered surface layer was extracted from the high photon energy range of the ellipsometric spectra, the buried disorder was studied by evaluating the interference oscillations of the low photon energy range of the spectra. The optical model construction was independently checked by RBS experiments.

KW - Damage Characterization

KW - Ion Implantation

KW - Rutherford Backscattering Spectrometry

KW - Spectroscopic Ellipsometry

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