Ion implantation induced buried disorder studied by Rutherford Backscattering Spectrometry and Spectroscopic Ellipsometry

T. Lohner, P. Petrik, O. Polgár, N. Q. Khánh, M. Fried, J. Gyulai

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this study, the damage created by ion implantation of N+2 ions into single crystalline 〈100〉 silicon is characterized using Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE). Samples were implanted at room temperature with ion energy of 400 keV to create buried disorder RBS and channeling techniques with 1.5 MeV He+ ions were used in the experiments. For the analysis of SE data we applied the method of assuming appropriate optical model and fitting the model parameters (thickness of surface oxide and damaged silicon layers and the volume fraction of amorphous silicon component in the damaged layers). The buried disorder was studied by evaluating the interference oscillations of the low photon energy range of the spectra. The optical model was independently checked by RBS experiments. Calculation using proposed optical model describes very well experimental SE data and predicts reasonably well the extent, intensity and depth of buried disorder as determined by RBS.

Original languageEnglish
Pages (from-to)487-490
Number of pages4
JournalVacuum
Volume50
Issue number3-4
Publication statusPublished - Jul 1 1998

Fingerprint

Spectroscopic ellipsometry
Rutherford backscattering spectroscopy
Ion implantation
Spectrometry
ellipsometry
ion implantation
backscattering
disorders
Silicon
Ions
spectroscopy
ions
silicon
Amorphous silicon
Oxides
amorphous silicon
Volume fraction
Photons
Experiments
Crystalline materials

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Ion implantation induced buried disorder studied by Rutherford Backscattering Spectrometry and Spectroscopic Ellipsometry. / Lohner, T.; Petrik, P.; Polgár, O.; Khánh, N. Q.; Fried, M.; Gyulai, J.

In: Vacuum, Vol. 50, No. 3-4, 01.07.1998, p. 487-490.

Research output: Contribution to journalArticle

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AU - Gyulai, J.

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