Ion implantation enhanced formation of 3C-SiC grains at the SiO 2/Si interface after annealing in CO gas

B. Pécz, J. Stoemenos, M. Voelskow, W. Skorupa, L. Dobos, A. Pongrcz, G. Battistig

Research output: Contribution to journalArticle

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Abstract

SiC grains can be grown without voids at the SiO2/Si interface using a simple method, i.e. annealing in CO gas. Present experiments aim to create nucleation centers for the SiC crystallite growth by carbon ion implantation. The formation of the nucleation clusters, as well as the morphology, the size and the density of the nanocrystals, were systematically studied by conventional and high resolution Transmission Electron Microscopy. The nanocrystallites were developed following two different modes of growth: The first develops facets along the crystallographic direction giving tetragonal grains, and the second facets along the direction resulting in elongated nanocrystallites. It was shown that combined low dose carbon implantation and subsequent high temperature annealing in CO leads to a substantial increase of the covering of the Si surface by high quality 3C-SiC nanocrystallites.

Original languageEnglish
Article number012045
JournalJournal of Physics: Conference Series
Volume209
DOIs
Publication statusPublished - 2010

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ion implantation
flat surfaces
nucleation
annealing
carbon
gases
voids
implantation
nanocrystals
coverings
dosage
transmission electron microscopy
high resolution

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Ion implantation enhanced formation of 3C-SiC grains at the SiO 2/Si interface after annealing in CO gas. / Pécz, B.; Stoemenos, J.; Voelskow, M.; Skorupa, W.; Dobos, L.; Pongrcz, A.; Battistig, G.

In: Journal of Physics: Conference Series, Vol. 209, 012045, 2010.

Research output: Contribution to journalArticle

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AU - Stoemenos, J.

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AU - Skorupa, W.

AU - Dobos, L.

AU - Pongrcz, A.

AU - Battistig, G.

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