Ion-implantation control of ferromagnetism in (Ga, Mn)As epitaxial layers

O. Yastrubchak, J. Z. Domagala, J. Sadowski, M. Kulik, J. Zuk, A. Tóth, R. Szymczak, T. Wosinski

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Epitaxial layers of (Ga, Mn)As ferromagnetic semiconductor have been subjected to low-energy ion implantation by applying a very low fluence of either chemically active, oxygen ions or inactive ions of neon noble gas. Several complementary characterization techniques have been used with the aim of studying the effect of ion implantation on the layer properties. Investigation of their electrical and magnetic properties revealed that implantation with either O or Ne ions completely suppressed both the conductivity and ferromagnetism in the layers. On the other hand, Raman spectroscopy measurements evidenced that O ion implantation influenced optical properties of the layers noticeably stronger than did Ne ion implantation. Moreover, structural modifications of the layers caused by ion implantation were investigated using high-resolution x-ray diffraction technique. A mechanism responsible for ion-implantation-induced suppression of the conductivity and ferromagnetism in (Ga, Mn)As layers, which could be applied as a method for tailoring nanostructures in the layers, is discussed in terms of defects created in the layers by the two implanted elements.

Original languageEnglish
Pages (from-to)794-798
Number of pages5
JournalJournal of Electronic Materials
Volume39
Issue number6
DOIs
Publication statusPublished - Jun 2010

Fingerprint

Ferromagnetism
Epitaxial layers
Ion implantation
ferromagnetism
ion implantation
Ions
Neon
Noble Gases
conductivity
Inert gases
Raman spectroscopy
Reactive Oxygen Species
Nanostructures
Magnetic properties
Electric properties
Optical properties
oxygen ions
Diffraction
neon
Semiconductor materials

Keywords

  • (Ga
  • Ferromagnetic semiconductor
  • High-resolution X-ray diffraction
  • Ion implantation
  • Mn)As
  • Raman spectroscopy
  • SQUID magnetometry

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Yastrubchak, O., Domagala, J. Z., Sadowski, J., Kulik, M., Zuk, J., Tóth, A., ... Wosinski, T. (2010). Ion-implantation control of ferromagnetism in (Ga, Mn)As epitaxial layers. Journal of Electronic Materials, 39(6), 794-798. https://doi.org/10.1007/s11664-010-1123-6

Ion-implantation control of ferromagnetism in (Ga, Mn)As epitaxial layers. / Yastrubchak, O.; Domagala, J. Z.; Sadowski, J.; Kulik, M.; Zuk, J.; Tóth, A.; Szymczak, R.; Wosinski, T.

In: Journal of Electronic Materials, Vol. 39, No. 6, 06.2010, p. 794-798.

Research output: Contribution to journalArticle

Yastrubchak, O, Domagala, JZ, Sadowski, J, Kulik, M, Zuk, J, Tóth, A, Szymczak, R & Wosinski, T 2010, 'Ion-implantation control of ferromagnetism in (Ga, Mn)As epitaxial layers', Journal of Electronic Materials, vol. 39, no. 6, pp. 794-798. https://doi.org/10.1007/s11664-010-1123-6
Yastrubchak, O. ; Domagala, J. Z. ; Sadowski, J. ; Kulik, M. ; Zuk, J. ; Tóth, A. ; Szymczak, R. ; Wosinski, T. / Ion-implantation control of ferromagnetism in (Ga, Mn)As epitaxial layers. In: Journal of Electronic Materials. 2010 ; Vol. 39, No. 6. pp. 794-798.
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