Ion-implantation-caused special damage profiles determined by spectroscopic ellipsometry in crystalline and in relaxed (annealed) amorphous silicon

T. Lohner, M. Fried, J. Gyulai, K. Vedam, N. V. Nguyen, L. J. Hanekamp, A. van Silfhout

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We previously developed a fitting method of several parameters to evaluate ion-implantation-caused damage profiles from spectroscopic ellipsometry (SE) (M. Fried et al., J. Appl. Phys., 71 (1992) 2835). Our optical model consists of a stack of layers with fixed and equal thicknesses and damage levels described by a depth profile function (coupled half Gaussians). The complex refractive index of each layer is calculated from the actual damage level by Bruggeman effective medium approximation (EMA) using crystalline (c-Si) and amorphous (a-Si) silicon as end-points. Two examples are presented of the use of this method with modified optical models. First, we investigated the surface damage formed by room temperature B+ and N+ implantation into silicon. For the analysis of the SE data we added a near surface amorphous layer to the model with variable thickness. Second, we determined 20 keV B+ implantation-caused damage profiles in relaxed (annealed) amorphous silicon. In this special case, the complex refractive index of each layer was calculated from the actual damage level by the EMA using relaxed a-Si and implanted a-Si as end-points. The calculated profiles are compared with Monte Carlo simulations (TRIM code); good agreement is obtained.

Original languageEnglish
Pages (from-to)117-121
Number of pages5
JournalThin Solid Films
Volume233
Issue number1-2
DOIs
Publication statusPublished - Oct 12 1993

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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