Ion implantation-caused damage in SiC measured by spectroscopic ellipsometry

P. Petrik, E. R. Shaaban, T. Lohner, G. Battistig, M. Fried, J. Garcia Lopez, Y. Morilla, O. Polgár, J. Gyulai

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Since ion implantation-caused damage changes the complex refractive index of SiC significantly, optical methods can be used to measure the sample properties sensitively, non-destructively and quickly. In the present work the damage created by ion implantation into SiC and its change upon annealing was characterized by spectroscopic ellipsometry (SE). 4H SiC samples were implanted with 150 keV Al using doses between 4 × l014 and 2 × l015 cm-2 with current densities from 0.4 to 2.5 μA cm-2. They were subsequently annealed at 1100 °C in Ar for 1 h. SE measurements were made before and after annealing. The relative damage was measured using the Bruggeman effective medium approximation combining the dielectric function of single-crystalline and totally amorphized SiC. Therefore, the prerequisite of the proper interpretation of SE data measured on partially damaged SiC is the knowledge of the complex dielectric function of single-crystalline and completely ion implantation amorphized SiC. The complex dielectric function of ion implantation-amorphized SiC was determined from a high-dose implant. Different optical models and the influence of experimental conditions on the damage were investigated. The results were crosschecked by Rutherford backscattering spectrometry.

Original languageEnglish
Pages (from-to)239-243
Number of pages5
JournalThin Solid Films
Volume455-456
DOIs
Publication statusPublished - May 1 2004

Fingerprint

Spectroscopic ellipsometry
Ion implantation
ellipsometry
ion implantation
damage
Annealing
Crystalline materials
dosage
annealing
Rutherford backscattering spectroscopy
Spectrometry
Refractive index
backscattering
Current density
optics
refractivity
current density
approximation
spectroscopy

Keywords

  • Ellipsometry
  • Ion implantation
  • Optical properties
  • SiC

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Ion implantation-caused damage in SiC measured by spectroscopic ellipsometry. / Petrik, P.; Shaaban, E. R.; Lohner, T.; Battistig, G.; Fried, M.; Lopez, J. Garcia; Morilla, Y.; Polgár, O.; Gyulai, J.

In: Thin Solid Films, Vol. 455-456, 01.05.2004, p. 239-243.

Research output: Contribution to journalArticle

Petrik, P. ; Shaaban, E. R. ; Lohner, T. ; Battistig, G. ; Fried, M. ; Lopez, J. Garcia ; Morilla, Y. ; Polgár, O. ; Gyulai, J. / Ion implantation-caused damage in SiC measured by spectroscopic ellipsometry. In: Thin Solid Films. 2004 ; Vol. 455-456. pp. 239-243.
@article{1cab8d7b73a044e08534c690e8c0681c,
title = "Ion implantation-caused damage in SiC measured by spectroscopic ellipsometry",
abstract = "Since ion implantation-caused damage changes the complex refractive index of SiC significantly, optical methods can be used to measure the sample properties sensitively, non-destructively and quickly. In the present work the damage created by ion implantation into SiC and its change upon annealing was characterized by spectroscopic ellipsometry (SE). 4H SiC samples were implanted with 150 keV Al using doses between 4 × l014 and 2 × l015 cm-2 with current densities from 0.4 to 2.5 μA cm-2. They were subsequently annealed at 1100 °C in Ar for 1 h. SE measurements were made before and after annealing. The relative damage was measured using the Bruggeman effective medium approximation combining the dielectric function of single-crystalline and totally amorphized SiC. Therefore, the prerequisite of the proper interpretation of SE data measured on partially damaged SiC is the knowledge of the complex dielectric function of single-crystalline and completely ion implantation amorphized SiC. The complex dielectric function of ion implantation-amorphized SiC was determined from a high-dose implant. Different optical models and the influence of experimental conditions on the damage were investigated. The results were crosschecked by Rutherford backscattering spectrometry.",
keywords = "Ellipsometry, Ion implantation, Optical properties, SiC",
author = "P. Petrik and Shaaban, {E. R.} and T. Lohner and G. Battistig and M. Fried and Lopez, {J. Garcia} and Y. Morilla and O. Polg{\'a}r and J. Gyulai",
year = "2004",
month = "5",
day = "1",
doi = "10.1016/j.tsf.2004.01.009",
language = "English",
volume = "455-456",
pages = "239--243",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

TY - JOUR

T1 - Ion implantation-caused damage in SiC measured by spectroscopic ellipsometry

AU - Petrik, P.

AU - Shaaban, E. R.

AU - Lohner, T.

AU - Battistig, G.

AU - Fried, M.

AU - Lopez, J. Garcia

AU - Morilla, Y.

AU - Polgár, O.

AU - Gyulai, J.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - Since ion implantation-caused damage changes the complex refractive index of SiC significantly, optical methods can be used to measure the sample properties sensitively, non-destructively and quickly. In the present work the damage created by ion implantation into SiC and its change upon annealing was characterized by spectroscopic ellipsometry (SE). 4H SiC samples were implanted with 150 keV Al using doses between 4 × l014 and 2 × l015 cm-2 with current densities from 0.4 to 2.5 μA cm-2. They were subsequently annealed at 1100 °C in Ar for 1 h. SE measurements were made before and after annealing. The relative damage was measured using the Bruggeman effective medium approximation combining the dielectric function of single-crystalline and totally amorphized SiC. Therefore, the prerequisite of the proper interpretation of SE data measured on partially damaged SiC is the knowledge of the complex dielectric function of single-crystalline and completely ion implantation amorphized SiC. The complex dielectric function of ion implantation-amorphized SiC was determined from a high-dose implant. Different optical models and the influence of experimental conditions on the damage were investigated. The results were crosschecked by Rutherford backscattering spectrometry.

AB - Since ion implantation-caused damage changes the complex refractive index of SiC significantly, optical methods can be used to measure the sample properties sensitively, non-destructively and quickly. In the present work the damage created by ion implantation into SiC and its change upon annealing was characterized by spectroscopic ellipsometry (SE). 4H SiC samples were implanted with 150 keV Al using doses between 4 × l014 and 2 × l015 cm-2 with current densities from 0.4 to 2.5 μA cm-2. They were subsequently annealed at 1100 °C in Ar for 1 h. SE measurements were made before and after annealing. The relative damage was measured using the Bruggeman effective medium approximation combining the dielectric function of single-crystalline and totally amorphized SiC. Therefore, the prerequisite of the proper interpretation of SE data measured on partially damaged SiC is the knowledge of the complex dielectric function of single-crystalline and completely ion implantation amorphized SiC. The complex dielectric function of ion implantation-amorphized SiC was determined from a high-dose implant. Different optical models and the influence of experimental conditions on the damage were investigated. The results were crosschecked by Rutherford backscattering spectrometry.

KW - Ellipsometry

KW - Ion implantation

KW - Optical properties

KW - SiC

UR - http://www.scopus.com/inward/record.url?scp=2142829356&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2142829356&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2004.01.009

DO - 10.1016/j.tsf.2004.01.009

M3 - Article

VL - 455-456

SP - 239

EP - 243

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -