Ion implantation-caused damage depth profiles in single-crystalline silicon studied by Spectroscopic Ellipsometry and Rutherford Backscattering Spectrometry

P. Petrik, O. Polgár, T. Lohner, M. Fried, N. Q. Khánh, J. Gyulai

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Damage created by ion implantation of Ar+ ions into single crystalline silicon is characterized using Spectroscopic Ellipsometry (SE) and Rutherford Backscattering Spectrometry (RBS). To create buried disorder, Ar+ ions with an energy of 100 keV were implanted into the samples. Ion doses were varied from 5 × 1013 atom/cm2 to 6.75 × 1014 atom/cm2. Damage depth profiles have been investigated using RBS combined with channeling, and SE. For the analysis of the SE data optical models were used, which consist of a stack of layers. The result proves the applicability of spectroscopic ellipsometry for the characterization of ion-implantation-caused damage. As an independent cross-checking method, Rutherford Backscattering Spectrometry was used. The RBS results basically supported the optical model of SE.

Original languageEnglish
Pages (from-to)293-297
Number of pages5
JournalVacuum
Volume50
Issue number3-4
Publication statusPublished - Jul 1 1998

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Spectroscopic ellipsometry
Rutherford backscattering spectroscopy
Silicon
Ion implantation
Spectrometry
ellipsometry
ion implantation
backscattering
Crystalline materials
damage
silicon
profiles
spectroscopy
Ions
Atoms
ions
atoms
disorders
dosage

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

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abstract = "Damage created by ion implantation of Ar+ ions into single crystalline silicon is characterized using Spectroscopic Ellipsometry (SE) and Rutherford Backscattering Spectrometry (RBS). To create buried disorder, Ar+ ions with an energy of 100 keV were implanted into the samples. Ion doses were varied from 5 × 1013 atom/cm2 to 6.75 × 1014 atom/cm2. Damage depth profiles have been investigated using RBS combined with channeling, and SE. For the analysis of the SE data optical models were used, which consist of a stack of layers. The result proves the applicability of spectroscopic ellipsometry for the characterization of ion-implantation-caused damage. As an independent cross-checking method, Rutherford Backscattering Spectrometry was used. The RBS results basically supported the optical model of SE.",
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T1 - Ion implantation-caused damage depth profiles in single-crystalline silicon studied by Spectroscopic Ellipsometry and Rutherford Backscattering Spectrometry

AU - Petrik, P.

AU - Polgár, O.

AU - Lohner, T.

AU - Fried, M.

AU - Khánh, N. Q.

AU - Gyulai, J.

PY - 1998/7/1

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