Ion bombardment induced damage in silicon carbide studied by ion beam analytical methods

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Damage created by implantation of Al+ ions into 4H-SiC is characterized using Backscattering Spectrometry in combination with channeling. The measurability of the damage profile in the carbon sublattice was demonstrated using the 4260 keV 12C(α,α)12C resonance. To create disorder, Al+ ions with energy of 200 keV and 350 keV were implanted at room temperature. As an independent method, cross-sectional transmission electron microscopy was used to study the damage structure in irradiated 4H-SiC.

Original languageEnglish
Pages (from-to)271-274
Number of pages4
JournalMaterials Science Forum
Volume353-356
DOIs
Publication statusPublished - Jan 1 2001

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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