Ion beam synthesis of graphite and diamond in silicon carbide

V. Heera, W. Skorupa, B. Pécz, L. Dobos

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

A high dose of 1 × 1018 cm-2, 60 keV carbon ions was implanted into single crystalline 6H silicon carbide (SiC) at elevated temperatures. The formation of carbon phases in the crystalline SiC lattice was investigated by cross sectional transmission electron microscopy. An amorphous, carbon rich phase was produced at 300°C. Precipitates of graphite were obtained at 600°C, whereas at 900°C small diamond grains were produced. These grains are in perfect epitaxial relation with the surrounding SiC lattice.

Original languageEnglish
Pages (from-to)2847-2849
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number20
Publication statusPublished - May 15 2000

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silicon carbides
graphite
diamonds
ion beams
carbon
synthesis
precipitates
dosage
transmission electron microscopy
ions
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ion beam synthesis of graphite and diamond in silicon carbide. / Heera, V.; Skorupa, W.; Pécz, B.; Dobos, L.

In: Applied Physics Letters, Vol. 76, No. 20, 15.05.2000, p. 2847-2849.

Research output: Contribution to journalArticle

Heera, V. ; Skorupa, W. ; Pécz, B. ; Dobos, L. / Ion beam synthesis of graphite and diamond in silicon carbide. In: Applied Physics Letters. 2000 ; Vol. 76, No. 20. pp. 2847-2849.
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