Ion beam synthesis of diamond-SiC-heterostructures

H. Weishart, V. Heera, F. Eichhorn, B. Pécz, Á Barna, W. Skorupa

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6 Citations (Scopus)

Abstract

Nanocrystals of silicon carbide were synthesized inside natural diamond using high dose silicon implantation. In order to retain the diamond structure implantation was done at 900 °C. The samples were subsequently annealed in an rf-heated furnace at 1500 °C for 10 min. X-Ray diffraction (XRD), IR absorption spectrometry and high-resolution cross-sectional transmission electron microscopy (HRTEM) are used to investigate formation and structure of SiC nanocrystallites in the implanted diamond. Raman spectroscopy contributed to trace implantation-induced destruction of the diamond. A first characterization of the electrical properties of the implanted and annealed samples is done by four-point probe measurements. The results indicate a highly conductive, buried layer inside the diamond. This layer contains cubic SiC nanocrystals, which are perfectly aligned with the diamond lattice. However, when fluence exceeds a critical value of 5.3×1017 Si+ cm-2, the diamond is irreversibly damaged and defect conduction type dominates.

Original languageEnglish
Pages (from-to)1241-1245
Number of pages5
JournalDiamond and Related Materials
Volume12
Issue number3-7
DOIs
Publication statusPublished - Mar 1 2003

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Keywords

  • Diamond crystal
  • Electrical conductivity
  • Ion bombardment
  • Silicon carbide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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