Ion beam synthesis of chromium silicide on porous silicon

A. R. Ramos, O. Conde, F. Pászti, G. Battistig, E. Vázsonyi, M. R. Da Silva, M. F. Da Silva, J. C. Soares

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Different types of porous Si layers several μm thick were implanted with 170 keV Cr+ ions to fluences of 3 × 1017 ions/cm2 both at RT and 450°C and then annealed (700°C 90 min + 1000°C 15 min). The porous structure collapsed into a compact one as it was proved by the O resonance method (Paszti et al., 1998 [1]). The formed silicide compounds were studied by Rutherford Backscattering Spectrometry (RBS), Glancing Incidence X-ray Diffraction (GIXRD) and four point probe resistivity measurements. According to resonant RBS and Elastic Recoil Detection (ERD)-measurements, the light impurities were partially expelled from the forming silicide layer. The resistivity, in spite of the remaining high impurity level, is surprisingly low. The quality of the formed silicide layer depends on the original impurity level as well as on the implantation temperature and annealing.

Original languageEnglish
Pages (from-to)926-930
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume161
DOIs
Publication statusPublished - Mar 2000

Fingerprint

Porous silicon
Chromium
porous silicon
Ion beams
chromium
ion beams
Rutherford backscattering spectroscopy
Impurities
impurities
Spectrometry
backscattering
synthesis
Ions
electrical resistivity
spectroscopy
implantation
fluence
ions
incidence
Annealing

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Ion beam synthesis of chromium silicide on porous silicon. / Ramos, A. R.; Conde, O.; Pászti, F.; Battistig, G.; Vázsonyi, E.; Da Silva, M. R.; Da Silva, M. F.; Soares, J. C.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 161, 03.2000, p. 926-930.

Research output: Contribution to journalArticle

@article{688e97135deb48fa8109cf0732c0cc7e,
title = "Ion beam synthesis of chromium silicide on porous silicon",
abstract = "Different types of porous Si layers several μm thick were implanted with 170 keV Cr+ ions to fluences of 3 × 1017 ions/cm2 both at RT and 450°C and then annealed (700°C 90 min + 1000°C 15 min). The porous structure collapsed into a compact one as it was proved by the O resonance method (Paszti et al., 1998 [1]). The formed silicide compounds were studied by Rutherford Backscattering Spectrometry (RBS), Glancing Incidence X-ray Diffraction (GIXRD) and four point probe resistivity measurements. According to resonant RBS and Elastic Recoil Detection (ERD)-measurements, the light impurities were partially expelled from the forming silicide layer. The resistivity, in spite of the remaining high impurity level, is surprisingly low. The quality of the formed silicide layer depends on the original impurity level as well as on the implantation temperature and annealing.",
author = "Ramos, {A. R.} and O. Conde and F. P{\'a}szti and G. Battistig and E. V{\'a}zsonyi and {Da Silva}, {M. R.} and {Da Silva}, {M. F.} and Soares, {J. C.}",
year = "2000",
month = "3",
doi = "10.1016/S0168-583X(99)00812-5",
language = "English",
volume = "161",
pages = "926--930",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",

}

TY - JOUR

T1 - Ion beam synthesis of chromium silicide on porous silicon

AU - Ramos, A. R.

AU - Conde, O.

AU - Pászti, F.

AU - Battistig, G.

AU - Vázsonyi, E.

AU - Da Silva, M. R.

AU - Da Silva, M. F.

AU - Soares, J. C.

PY - 2000/3

Y1 - 2000/3

N2 - Different types of porous Si layers several μm thick were implanted with 170 keV Cr+ ions to fluences of 3 × 1017 ions/cm2 both at RT and 450°C and then annealed (700°C 90 min + 1000°C 15 min). The porous structure collapsed into a compact one as it was proved by the O resonance method (Paszti et al., 1998 [1]). The formed silicide compounds were studied by Rutherford Backscattering Spectrometry (RBS), Glancing Incidence X-ray Diffraction (GIXRD) and four point probe resistivity measurements. According to resonant RBS and Elastic Recoil Detection (ERD)-measurements, the light impurities were partially expelled from the forming silicide layer. The resistivity, in spite of the remaining high impurity level, is surprisingly low. The quality of the formed silicide layer depends on the original impurity level as well as on the implantation temperature and annealing.

AB - Different types of porous Si layers several μm thick were implanted with 170 keV Cr+ ions to fluences of 3 × 1017 ions/cm2 both at RT and 450°C and then annealed (700°C 90 min + 1000°C 15 min). The porous structure collapsed into a compact one as it was proved by the O resonance method (Paszti et al., 1998 [1]). The formed silicide compounds were studied by Rutherford Backscattering Spectrometry (RBS), Glancing Incidence X-ray Diffraction (GIXRD) and four point probe resistivity measurements. According to resonant RBS and Elastic Recoil Detection (ERD)-measurements, the light impurities were partially expelled from the forming silicide layer. The resistivity, in spite of the remaining high impurity level, is surprisingly low. The quality of the formed silicide layer depends on the original impurity level as well as on the implantation temperature and annealing.

UR - http://www.scopus.com/inward/record.url?scp=0033904963&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033904963&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(99)00812-5

DO - 10.1016/S0168-583X(99)00812-5

M3 - Article

AN - SCOPUS:0033904963

VL - 161

SP - 926

EP - 930

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

ER -