Ion-beam mixing of Co-Si and Co-SiO2: A comparison between Monte Carlo simulations and experiments

I. Kasko, C. Dehm, J. Gyulai, H. Ryssel

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The reaction of thin Co films with Si and SiO2 during ion-beam mixing with As and Ge was studied. Fluences and energies used were varied between 2·1014 and 5·1015cm-2, and 15 and 200 keV, respectively. Concentration profiles of As, Ge, and Co were measured by SIMS; cross-sectional TEM-analysis was applied in order to investigate the metal-silicon interface. By comparing theoretical and experimental profiles, it was possible to separate ballistic effects from thermal processes in the Co-Si system. All theoretical profiles were calculated using the dynamic Monte-Carlo simulation program T-DYN. In case of Co-SiO2 interaction, it could be shown that the Co distribution in the oxide was only caused by recoil implantation and not by diffusion processes or reactions.

Original languageEnglish
Pages (from-to)345-352
Number of pages8
JournalRadiation Effects and Defects in Solids
Volume130-31
Publication statusPublished - 1994

Fingerprint

Silicon
Secondary ion mass spectrometry
Ballistics
Oxides
Ion beams
Metals
ion beams
Transmission electron microscopy
profiles
simulation
Experiments
ballistics
secondary ion mass spectrometry
implantation
fluence
transmission electron microscopy
oxides
silicon
metals
Hot Temperature

ASJC Scopus subject areas

  • Nuclear Energy and Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Radiation

Cite this

Ion-beam mixing of Co-Si and Co-SiO2 : A comparison between Monte Carlo simulations and experiments. / Kasko, I.; Dehm, C.; Gyulai, J.; Ryssel, H.

In: Radiation Effects and Defects in Solids, Vol. 130-31, 1994, p. 345-352.

Research output: Contribution to journalArticle

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