Ion-beam mixing of Co-Si and Co-SiO2: A comparison between monte carlo simulations and experiments

I. Kasko, C. Dehm, J. Gyula, H. Ryssel

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The reaction of thin Co films with Si and Si02during ion-beam mixing with As and Ge was studied. Fluences and energies used were varied between 2.1014and 5-10l5cm-2and 15 and 200 keV, respectively. Concentration profiles of As, Ge, and Co were measured by SIMS; cross-sectional TEM-analysis was applied in order to investigate the metal-silicon interface. By comparing theoretical and experimental profiles, it was possible to separate ballistic effects from thermal processes in the Co-Si system. All theoretical profiles were calculated using the dynamic Monte-Carlo simulation program T-DYN. In case of Co-Si02interaction, it could be shown that the Co distribution in the oxide was only caused by recoil implantation and not by diffusion processes or reactions.

Original languageEnglish
Pages (from-to)345-352
Number of pages8
JournalRadiation Effects and Defects in Solids
Volume130-131
Issue number1
DOIs
Publication statusPublished - Jul 1 1994

Keywords

  • Ion-Beam Mixing
  • Monte-Carlo simulation
  • cobalt
  • oxide
  • silicide

ASJC Scopus subject areas

  • Radiation
  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Condensed Matter Physics

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