n+p-diodes with high conductivity MoSi2-contacts were fabricated using self-aligned silicide technology and ion-beam mixing for silicidation. For optimizing contact properties, different ion-beam mixing processes were compared. The first mixing process investigated was a conventional one, using arsenic ions for silicide formation and doping of the underlying silicon substrate. After mixing, rapid thermal annealing was performed in a N2 ambient to form stoichiometric MoSi2 layers. The second ion-beam mixing process included a sequence of implantations: Silicon ions were used to cause mixing between the Mo-film and the underlying substrate. Rapid thermal annealing in N2 ambient for silicidation was followed by a further silicon implantation to amorphize silicon substrate before junction doping by arsenic ions was performed. Electrical measurements were used to determine contact properties.