Ion-beam mixed MoSi2 layers: Formation and contact properties

C. Dehm, G. Vályi, J. Gyulai, H. Ryssel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

n+p-diodes with high conductivity MoSi2-contacts were fabricated using self-aligned silicide technology and ion-beam mixing for silicidation. For optimizing contact properties, different ion-beam mixing processes were compared. The first mixing process investigated was a conventional one, using arsenic ions for silicide formation and doping of the underlying silicon substrate. After mixing, rapid thermal annealing was performed in a N2 ambient to form stoichiometric MoSi2 layers. The second ion-beam mixing process included a sequence of implantations: Silicon ions were used to cause mixing between the Mo-film and the underlying substrate. Rapid thermal annealing in N2 ambient for silicidation was followed by a further silicon implantation to amorphize silicon substrate before junction doping by arsenic ions was performed. Electrical measurements were used to determine contact properties.

Original languageEnglish
Title of host publicationESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference
EditorsHeiner Ryssel, Anton Heuberger, Peter Lange
PublisherIEEE Computer Society
Pages253-256
Number of pages4
ISBN (Electronic)0387510001
ISBN (Print)9780387510002
Publication statusPublished - Jan 1 1989
Event19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany
Duration: Sep 11 1989Sep 14 1989

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other19th European Solid State Device Research Conference, ESSDERC 1989
CountryGermany
CityBerlin
Period9/11/899/14/89

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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  • Cite this

    Dehm, C., Vályi, G., Gyulai, J., & Ryssel, H. (1989). Ion-beam mixed MoSi2 layers: Formation and contact properties. In H. Ryssel, A. Heuberger, & P. Lange (Eds.), ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference (pp. 253-256). [5436618] (European Solid-State Device Research Conference). IEEE Computer Society.