Ion beam effect on Ge-Se chalcogenide glass films: Non-volatile memory array formation, structural changes and device performance

M. R. Latif, T. L. Nichol, M. Mitkova, D. A. Tenne, I. Csarnovics, S. Kökényesi, A. Csík

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this work a scheme for fabricating a conductive bridge non-volatile memory arrays, using ion bombardment through a mask, is demonstrated. Blanket films and devices have been created to study the structural changes, surface roughness and device performance. Ar+ ions interaction on thin films of GexSe1-x system have been studied using Raman Spectroscopy, Atomic Force Microscopy (AFM) and Energy Dispersive X-Ray Spectroscopy (EDS). The performance of the memory devices has been analyzed based on the formation of vias and damage accumulation due to Ar+ ion interactions with GexSe1-x(x=0.25, 0.3 and 0.4) thin films of chalcogenide glasses (ChG). This method of devices/arrays fabrication provides a unique alternative to conventional photolithography for prototyping redox conductive bridge memory without involving any wet chemistry.

Original languageEnglish
Title of host publicationIEEE Workshop on Microelectronics and Electron Devices, WMED
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479922222
DOIs
Publication statusPublished - 2014
Event2014 IEEE Workshop on Microelectronics and Electron Devices, WMED 2014 - Boise, ID, United States
Duration: Apr 18 2014Apr 18 2014

Other

Other2014 IEEE Workshop on Microelectronics and Electron Devices, WMED 2014
CountryUnited States
CityBoise, ID
Period4/18/144/18/14

Fingerprint

Ion beams
Data storage equipment
Glass
Ions
Thin films
Photolithography
Ion bombardment
Raman spectroscopy
Masks
Energy dispersive spectroscopy
Atomic force microscopy
Surface roughness
Fabrication
Oxidation-Reduction
X-Ray Emission Spectrometry

Keywords

  • chalcogenide glass
  • film and device characterization
  • Redox conductive bridge memory

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Latif, M. R., Nichol, T. L., Mitkova, M., Tenne, D. A., Csarnovics, I., Kökényesi, S., & Csík, A. (2014). Ion beam effect on Ge-Se chalcogenide glass films: Non-volatile memory array formation, structural changes and device performance. In IEEE Workshop on Microelectronics and Electron Devices, WMED [6818720] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WMED.2014.6818720

Ion beam effect on Ge-Se chalcogenide glass films : Non-volatile memory array formation, structural changes and device performance. / Latif, M. R.; Nichol, T. L.; Mitkova, M.; Tenne, D. A.; Csarnovics, I.; Kökényesi, S.; Csík, A.

IEEE Workshop on Microelectronics and Electron Devices, WMED. Institute of Electrical and Electronics Engineers Inc., 2014. 6818720.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Latif, MR, Nichol, TL, Mitkova, M, Tenne, DA, Csarnovics, I, Kökényesi, S & Csík, A 2014, Ion beam effect on Ge-Se chalcogenide glass films: Non-volatile memory array formation, structural changes and device performance. in IEEE Workshop on Microelectronics and Electron Devices, WMED., 6818720, Institute of Electrical and Electronics Engineers Inc., 2014 IEEE Workshop on Microelectronics and Electron Devices, WMED 2014, Boise, ID, United States, 4/18/14. https://doi.org/10.1109/WMED.2014.6818720
Latif MR, Nichol TL, Mitkova M, Tenne DA, Csarnovics I, Kökényesi S et al. Ion beam effect on Ge-Se chalcogenide glass films: Non-volatile memory array formation, structural changes and device performance. In IEEE Workshop on Microelectronics and Electron Devices, WMED. Institute of Electrical and Electronics Engineers Inc. 2014. 6818720 https://doi.org/10.1109/WMED.2014.6818720
Latif, M. R. ; Nichol, T. L. ; Mitkova, M. ; Tenne, D. A. ; Csarnovics, I. ; Kökényesi, S. ; Csík, A. / Ion beam effect on Ge-Se chalcogenide glass films : Non-volatile memory array formation, structural changes and device performance. IEEE Workshop on Microelectronics and Electron Devices, WMED. Institute of Electrical and Electronics Engineers Inc., 2014.
@inproceedings{283574844e12449ea1a8f541f812cca0,
title = "Ion beam effect on Ge-Se chalcogenide glass films: Non-volatile memory array formation, structural changes and device performance",
abstract = "In this work a scheme for fabricating a conductive bridge non-volatile memory arrays, using ion bombardment through a mask, is demonstrated. Blanket films and devices have been created to study the structural changes, surface roughness and device performance. Ar+ ions interaction on thin films of GexSe1-x system have been studied using Raman Spectroscopy, Atomic Force Microscopy (AFM) and Energy Dispersive X-Ray Spectroscopy (EDS). The performance of the memory devices has been analyzed based on the formation of vias and damage accumulation due to Ar+ ion interactions with GexSe1-x(x=0.25, 0.3 and 0.4) thin films of chalcogenide glasses (ChG). This method of devices/arrays fabrication provides a unique alternative to conventional photolithography for prototyping redox conductive bridge memory without involving any wet chemistry.",
keywords = "chalcogenide glass, film and device characterization, Redox conductive bridge memory",
author = "Latif, {M. R.} and Nichol, {T. L.} and M. Mitkova and Tenne, {D. A.} and I. Csarnovics and S. K{\"o}k{\'e}nyesi and A. Cs{\'i}k",
year = "2014",
doi = "10.1109/WMED.2014.6818720",
language = "English",
isbn = "9781479922222",
booktitle = "IEEE Workshop on Microelectronics and Electron Devices, WMED",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Ion beam effect on Ge-Se chalcogenide glass films

T2 - Non-volatile memory array formation, structural changes and device performance

AU - Latif, M. R.

AU - Nichol, T. L.

AU - Mitkova, M.

AU - Tenne, D. A.

AU - Csarnovics, I.

AU - Kökényesi, S.

AU - Csík, A.

PY - 2014

Y1 - 2014

N2 - In this work a scheme for fabricating a conductive bridge non-volatile memory arrays, using ion bombardment through a mask, is demonstrated. Blanket films and devices have been created to study the structural changes, surface roughness and device performance. Ar+ ions interaction on thin films of GexSe1-x system have been studied using Raman Spectroscopy, Atomic Force Microscopy (AFM) and Energy Dispersive X-Ray Spectroscopy (EDS). The performance of the memory devices has been analyzed based on the formation of vias and damage accumulation due to Ar+ ion interactions with GexSe1-x(x=0.25, 0.3 and 0.4) thin films of chalcogenide glasses (ChG). This method of devices/arrays fabrication provides a unique alternative to conventional photolithography for prototyping redox conductive bridge memory without involving any wet chemistry.

AB - In this work a scheme for fabricating a conductive bridge non-volatile memory arrays, using ion bombardment through a mask, is demonstrated. Blanket films and devices have been created to study the structural changes, surface roughness and device performance. Ar+ ions interaction on thin films of GexSe1-x system have been studied using Raman Spectroscopy, Atomic Force Microscopy (AFM) and Energy Dispersive X-Ray Spectroscopy (EDS). The performance of the memory devices has been analyzed based on the formation of vias and damage accumulation due to Ar+ ion interactions with GexSe1-x(x=0.25, 0.3 and 0.4) thin films of chalcogenide glasses (ChG). This method of devices/arrays fabrication provides a unique alternative to conventional photolithography for prototyping redox conductive bridge memory without involving any wet chemistry.

KW - chalcogenide glass

KW - film and device characterization

KW - Redox conductive bridge memory

UR - http://www.scopus.com/inward/record.url?scp=84901932172&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84901932172&partnerID=8YFLogxK

U2 - 10.1109/WMED.2014.6818720

DO - 10.1109/WMED.2014.6818720

M3 - Conference contribution

AN - SCOPUS:84901932172

SN - 9781479922222

BT - IEEE Workshop on Microelectronics and Electron Devices, WMED

PB - Institute of Electrical and Electronics Engineers Inc.

ER -