Ion beam characterisation and modification of porous silicon

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Several investigations have been done in the field of ion implantation and ion beam analysis of porous silicon. The present paper summarises our investigations presenting our most recent results. Changes of pore structure caused by ion implantation and examples demonstrating the capability of ion beam analysis in characterising the morphology of porous layers will be presented. Pore wall decoration through plasma immersion ion implantation and the effect of pre-implantation on pore propagation during anodisation will also be shortly mentioned.

Original languageEnglish
Pages (from-to)271-278
Number of pages8
JournalPhysica Status Solidi (A) Applied Research
Volume182
Issue number1
DOIs
Publication statusPublished - Nov 2000

Fingerprint

Porous silicon
porous silicon
Ion implantation
Ion beams
ion implantation
ion beams
porosity
submerging
implantation
Pore structure
propagation
Plasmas

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Ion beam characterisation and modification of porous silicon. / Pászti, F.; Battistig, G.

In: Physica Status Solidi (A) Applied Research, Vol. 182, No. 1, 11.2000, p. 271-278.

Research output: Contribution to journalArticle

@article{e32c9ce56340445e8b4b4b4014ddee0b,
title = "Ion beam characterisation and modification of porous silicon",
abstract = "Several investigations have been done in the field of ion implantation and ion beam analysis of porous silicon. The present paper summarises our investigations presenting our most recent results. Changes of pore structure caused by ion implantation and examples demonstrating the capability of ion beam analysis in characterising the morphology of porous layers will be presented. Pore wall decoration through plasma immersion ion implantation and the effect of pre-implantation on pore propagation during anodisation will also be shortly mentioned.",
author = "F. P{\'a}szti and G. Battistig",
year = "2000",
month = "11",
doi = "10.1002/1521-396X(200011)182:1<271::AID-PSSA271>3.0.CO;2-#",
language = "English",
volume = "182",
pages = "271--278",
journal = "Physica Status Solidi (A) Applied Research",
issn = "0031-8965",
publisher = "Wiley-VCH Verlag",
number = "1",

}

TY - JOUR

T1 - Ion beam characterisation and modification of porous silicon

AU - Pászti, F.

AU - Battistig, G.

PY - 2000/11

Y1 - 2000/11

N2 - Several investigations have been done in the field of ion implantation and ion beam analysis of porous silicon. The present paper summarises our investigations presenting our most recent results. Changes of pore structure caused by ion implantation and examples demonstrating the capability of ion beam analysis in characterising the morphology of porous layers will be presented. Pore wall decoration through plasma immersion ion implantation and the effect of pre-implantation on pore propagation during anodisation will also be shortly mentioned.

AB - Several investigations have been done in the field of ion implantation and ion beam analysis of porous silicon. The present paper summarises our investigations presenting our most recent results. Changes of pore structure caused by ion implantation and examples demonstrating the capability of ion beam analysis in characterising the morphology of porous layers will be presented. Pore wall decoration through plasma immersion ion implantation and the effect of pre-implantation on pore propagation during anodisation will also be shortly mentioned.

UR - http://www.scopus.com/inward/record.url?scp=1642476498&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1642476498&partnerID=8YFLogxK

U2 - 10.1002/1521-396X(200011)182:1<271::AID-PSSA271>3.0.CO;2-#

DO - 10.1002/1521-396X(200011)182:1<271::AID-PSSA271>3.0.CO;2-#

M3 - Article

AN - SCOPUS:1642476498

VL - 182

SP - 271

EP - 278

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 1

ER -