Ion beam analysis and computer simulation of damage accumulation in nitrogen implanted 6H-SiC: Effects of channeling

Z. Zolnai, A. Ster, N. Q. Khánh, E. Kótai, M. Posselt, G. Battistig, T. Lohner, J. Gyulai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

500 keV nitrogen implantations at different tilt angles (0°, 0.5°, 1.2°, 1.6°, 4°) with respect to the c-axis of 6H-SiC were carried out. Radiation damage distributions have been investigated by Backscattering Spectrometry combined with channeling technique (BS/C) using 3550 keV 4He+ ion beam. A comparative simultaneous evaluation of the damage depth distributions in the Si and C sublattices of 6H-SiC led to a correction factor of 0.8 in the electronic stopping power of 4He + ions along 〈0001〉 channel. Full-cascade Crystal-TRIM simulations with the same set of damage accumulation model parameters could reconstruct the measured shapes and heights of damage distributions for all implantation tilt angles. Secondary defect generation effects in addition to the primary point defect accumulation were assumed in the analysis.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials
Pages637-640
Number of pages4
Publication statusPublished - Dec 1 2005
Event5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 - Bologna, Italy
Duration: Aug 31 2004Sep 4 2004

Publication series

NameMaterials Science Forum
Volume483-485
ISSN (Print)0255-5476

Other

Other5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004
CountryItaly
CityBologna
Period8/31/049/4/04

Keywords

  • Backscattering spectrometry
  • Channeling
  • Computer simulation
  • Electronic stopping power
  • Radiation defects
  • Silicon carbide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Zolnai, Z., Ster, A., Khánh, N. Q., Kótai, E., Posselt, M., Battistig, G., Lohner, T., & Gyulai, J. (2005). Ion beam analysis and computer simulation of damage accumulation in nitrogen implanted 6H-SiC: Effects of channeling. In Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials (pp. 637-640). (Materials Science Forum; Vol. 483-485).