Investigations of the electron structure of ion-implanted amorphous germanium

G. Petö, J. Kanski, U. Södervall

Research output: Contribution to journalArticle

8 Citations (Scopus)


Ge amorphised by Sb+ implantation has been investigated by means of UV photoemission. Our results differ significantly from earlier data on amorphous Ge. It is suggested that this implantation produces a new kind of amorphous state, characterized by modified local atomic arrangement.

Original languageEnglish
Pages (from-to)510-514
Number of pages5
JournalPhysics Letters A
Issue number9
Publication statusPublished - Oct 19 1987

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Investigations of the electron structure of ion-implanted amorphous germanium'. Together they form a unique fingerprint.

  • Cite this