Investigations of the electron structure of ion-implanted amorphous germanium

G. Pető, J. Kanski, U. Södervall

Research output: Contribution to journalArticle

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Abstract

Ge amorphised by Sb+ implantation has been investigated by means of UV photoemission. Our results differ significantly from earlier data on amorphous Ge. It is suggested that this implantation produces a new kind of amorphous state, characterized by modified local atomic arrangement.

Original languageEnglish
Pages (from-to)510-514
Number of pages5
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume124
Issue number9
DOIs
Publication statusPublished - Oct 19 1987

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germanium
implantation
ions
electrons
photoelectric emission

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Investigations of the electron structure of ion-implanted amorphous germanium. / Pető, G.; Kanski, J.; Södervall, U.

In: Physics Letters, Section A: General, Atomic and Solid State Physics, Vol. 124, No. 9, 19.10.1987, p. 510-514.

Research output: Contribution to journalArticle

@article{056e2accdbff44ac8ed68764f2b444d2,
title = "Investigations of the electron structure of ion-implanted amorphous germanium",
abstract = "Ge amorphised by Sb+ implantation has been investigated by means of UV photoemission. Our results differ significantly from earlier data on amorphous Ge. It is suggested that this implantation produces a new kind of amorphous state, characterized by modified local atomic arrangement.",
author = "G. Pető and J. Kanski and U. S{\"o}dervall",
year = "1987",
month = "10",
day = "19",
doi = "10.1016/0375-9601(87)90055-7",
language = "English",
volume = "124",
pages = "510--514",
journal = "Physics Letters, Section A: General, Atomic and Solid State Physics",
issn = "0375-9601",
publisher = "Elsevier",
number = "9",

}

TY - JOUR

T1 - Investigations of the electron structure of ion-implanted amorphous germanium

AU - Pető, G.

AU - Kanski, J.

AU - Södervall, U.

PY - 1987/10/19

Y1 - 1987/10/19

N2 - Ge amorphised by Sb+ implantation has been investigated by means of UV photoemission. Our results differ significantly from earlier data on amorphous Ge. It is suggested that this implantation produces a new kind of amorphous state, characterized by modified local atomic arrangement.

AB - Ge amorphised by Sb+ implantation has been investigated by means of UV photoemission. Our results differ significantly from earlier data on amorphous Ge. It is suggested that this implantation produces a new kind of amorphous state, characterized by modified local atomic arrangement.

UR - http://www.scopus.com/inward/record.url?scp=0008621009&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0008621009&partnerID=8YFLogxK

U2 - 10.1016/0375-9601(87)90055-7

DO - 10.1016/0375-9601(87)90055-7

M3 - Article

VL - 124

SP - 510

EP - 514

JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

SN - 0375-9601

IS - 9

ER -