INVESTIGATION OF THE OXIDATION OF TANTALUM NITRIDE LAYERS BY RBS AND AES METHODS AND BY THE MEASURING OF THE RESISTANCE, RESPECTIVELY.

V. P. Kolonits, E. Kotai, Gy Hars, J. Gyulai

Research output: Contribution to journalConference article

Abstract

The thermal oxidation of sputtered tantalum nitride layers was investigated by Rutherford Backscattering and by Auger Electron Spectroscopy in order to verify the assumption, that the resistance increase following the thermal process is caused by the decrease of the metallic layer thickness while an oxide layer grows on the surface. This assumption was formerly used by V. P. Kolonits (et al. ) who made on this base some kinetic deductions concerning the oxidation of tantalum nitride layers.

Original languageEnglish
Pages (from-to)677-682
Number of pages6
JournalAnnual Proceedings - Reliability Physics (Symposium)
Volume1
Publication statusPublished - Jan 1 1980
EventUnknown conference - Cannes, Fr
Duration: Sep 22 1980Sep 26 1980

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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