Investigation of the morphology and electrical characteristics of FeSi 2 quantum dots on silicon

L. Dózsa, G. Molnár, Z. Horváth, A. Tóth, J. Gyulai, V. Raineri, F. Giannazzo

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

β-FeSi2 quantum dots (QD) were grown by evaporating 2, 4 and 7nm Fe onto Si(100) wafers and in situ annealed at 600°C for 10min. QDs were grown also by reactive deposition epitaxy (RDE) evaporating 2nm Fe onto a 600°C Si substrate and annealed further for 5min. MIS structures were prepared by evaporating SiOx over the QDs and Al dots on the oxide. The SEM investigations show the density of the QDs is about 10 10cm-2 in the 2 and 4nm Fe samples, and it increases to about 3×1011cm-2 in the 7nm Fe sample. The nanoscope investigation shows well resolved QDs only in the 7nm Fe samples, but their density and size do not allow individual characterization of the QDs by scanning capacitance microscopic measurements. In the RDE samples the QDs are small and irregular, indicating the need for thicker Fe layer. Capacitance-voltage (C-V) measurements show point defects generated by silicidation which compensate the silicon doping (2×1015cm-3) in about 1μm depth. C-V results show that in the RDE samples less point defect are generated, their concentration is lower than doping of the Si wafers. The electrical characteristics of MIS structures show that the room temperature deposited iron degrades the I-V characteristics, and induces leakage.

Original languageEnglish
Pages (from-to)60-66
Number of pages7
JournalApplied Surface Science
Volume234
Issue number1-4
DOIs
Publication statusPublished - Jul 15 2004

Fingerprint

Silicon
Epitaxial growth
Semiconductor quantum dots
Management information systems
quantum dots
Point defects
epitaxy
silicon
Capacitance
Doping (additives)
capacitance
MIS (semiconductors)
Capacitance measurement
Voltage measurement
point defects
Oxides
wafers
Iron
Scanning
Scanning electron microscopy

Keywords

  • Defect in silicon
  • Iron silicides
  • Quantum dot

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Investigation of the morphology and electrical characteristics of FeSi 2 quantum dots on silicon. / Dózsa, L.; Molnár, G.; Horváth, Z.; Tóth, A.; Gyulai, J.; Raineri, V.; Giannazzo, F.

In: Applied Surface Science, Vol. 234, No. 1-4, 15.07.2004, p. 60-66.

Research output: Contribution to journalArticle

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AU - Giannazzo, F.

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