Investigation of the morphology and electrical characteristics of FeSi 2 quantum dots on silicon

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4 Citations (Scopus)


β-FeSi 2 quantum dots (QD) were grown by evaporating 2, 4 and 7nm Fe onto Si(100) wafers and in situ annealed at 600°C for 10min. QDs were grown also by reactive deposition epitaxy (RDE) evaporating 2nm Fe onto a 600°C Si substrate and annealed further for 5min. MIS structures were prepared by evaporating SiO x over the QDs and Al dots on the oxide. The SEM investigations show the density of the QDs is about 10 10 cm -2 in the 2 and 4nm Fe samples, and it increases to about 3×10 11 cm -2 in the 7nm Fe sample. The nanoscope investigation shows well resolved QDs only in the 7nm Fe samples, but their density and size do not allow individual characterization of the QDs by scanning capacitance microscopic measurements. In the RDE samples the QDs are small and irregular, indicating the need for thicker Fe layer. Capacitance-voltage (C-V) measurements show point defects generated by silicidation which compensate the silicon doping (2×10 15 cm -3 ) in about 1μm depth. C-V results show that in the RDE samples less point defect are generated, their concentration is lower than doping of the Si wafers. The electrical characteristics of MIS structures show that the room temperature deposited iron degrades the I-V characteristics, and induces leakage.

Original languageEnglish
Pages (from-to)60-66
Number of pages7
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - Jul 15 2004
EventThe Ninth International Conference on the Formation of Semicon - Madrid, Spain
Duration: Sep 15 2003Sep 19 2003


  • Defect in silicon
  • Iron silicides
  • Quantum dot

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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