Investigation of the doping level in overcompensated p-GaP layers grown by liquid phase epitaxy

J. Pfeifer, L. Csontos, B. Szentpáli

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

One of the most important steps in the production of GaP:N light emitting diodes is the formation of the p-n junction of the diodes. The p-n junction can be produced by epitaxial growth of a layer of n-type, and following this one of p-type on the substrate n+. The p-layer may be grown in one step with the growth of the n-layer, by change of the dopant content of the melt to convert it from donor to acceptor-type, by overcompensation. A study is made of the doping levels of epitaxial p-layers grown by the overcompensation technique, and of the distribution of the dopant concentration, by the method of measuring the C-V curves of surfaces barrier diodes. The doping level can be influenced by the Zn vapour pressure of the environment and by factors affecting Zn transport, e.g. saturation time, melt thickness, substrate holder construction. The experimental results support the conception that in liquid phase epitaxial crystal growths not only the separation of the main component, but also the incorporation of the impurities is kinetically controlled. Zn transport through the melt plays a role in the structure of the resulting layers. Experiments were also carried out on the overcompensation of samples with extremely high donor backgrounds.

Original languageEnglish
Pages (from-to)29-42
Number of pages14
JournalActa Physica Academiae Scientiarum Hungaricae
Volume44
Issue number1
DOIs
Publication statusPublished - Jan 1978

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liquid phase epitaxy
p-n junctions
diodes
holders
vapor pressure
crystal growth
liquid phases
light emitting diodes
saturation
impurities
curves

ASJC Scopus subject areas

  • Nuclear and High Energy Physics

Cite this

Investigation of the doping level in overcompensated p-GaP layers grown by liquid phase epitaxy. / Pfeifer, J.; Csontos, L.; Szentpáli, B.

In: Acta Physica Academiae Scientiarum Hungaricae, Vol. 44, No. 1, 01.1978, p. 29-42.

Research output: Contribution to journalArticle

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