Investigation of Ta grain boundary diffusion in copper by means of Auger electron spectroscopy

G. Erdélyi, G. Langer, J. Nyéki, L. Kövér, C. Tomastik, W. S.M. Werner, A. Csik, H. Stoeri, D. L. Beke

Research output: Contribution to journalConference article

13 Citations (Scopus)


The thermal behaviour of sputtered Cu/Ta bilayer films on Si-substrate (Cu is the top layer) was investigated in the temperature range of 563-713 K. Samples were heated in ultra high vacuum conditions, while the Auger intensities were monitored. The time evolution of the Ta and Cu Auger signals was interpreted as Ta grain boundary diffusion through the Cu film and Ta accumulation on the copper surface. On the basis of the method developed by Hwang and Baluffi, the activation energy of the Ta grain boundary diffusion in copper was determined (Q=0.7±0.2 eV). At 713 K a 10-h heat treatment caused a complete degradation of the sample, silicon appeared on the top surface and silicide formation was detected.

Original languageEnglish
Pages (from-to)303-307
Number of pages5
JournalThin Solid Films
Issue number1-2
Publication statusPublished - Jul 1 2004
EventProceedings of the Eight European Vacuum Congress Berlin 2003 - Berlin, Germany
Duration: Jun 23 2004Jun 26 2004


  • Auger electron spectroscopy
  • Cu/Ta thin film
  • Diffusion barrier
  • Grain boundary diffusion

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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