Investigation of solid phase epitaxial regrowth on ion-implanted silicon by backscattering spectrometry and ellipsometry

M. Fried, T. Lohner, G. Vizkelethy, E. Jároli, G. Mezey, J. Gyulai

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

During solid phase epitaxial regrowth (SPEG) of ion-implanted silicon the thickness of the remaining amorphous layer decreases with increasing annealing time. This amorphous layer is optically different from the as-implanted one in the wavelength region of 1-10 μm. We have investigated the thermally stabilized state by ellipsometry at a wavelength of 632.8 nm. To establish an appropriate optical model and to check the thickness data obtained from ellipsometry. we used high depth resolution backscattering spectrometry combined with channeling (BS). Using special arrangements in backscattering spectrometry such as glancing detection and 16O(α, α)16 elastic nuclear scattering, we were able to construct realistic optical models both for amorphization and recrystallization experiments. The complex refractive index for as-implanted amorphous silicon is 4.63-0.76i and for thermally stabilized silicon is 4.55-0.35i. The thickness data of amorphous layers obtained by ellipsometry are in good agreement with values deduced from BS.

Original languageEnglish
Pages (from-to)422-424
Number of pages3
JournalNuclear Inst. and Methods in Physics Research, B
Volume15
Issue number1-6
DOIs
Publication statusPublished - Apr 1 1986

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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