Crystalline silicon samples were investigated both in channeling and random directions by using the (p, ṕ) resonance scattering at 2.3 MeV bombarding energy. The samples were positioned in the scattering chamber of a VdG accelerator after 2 m collimating path. The peaks due to the resonance at 2.1 MeV were measured at different angles in the vicinity of the channeling and random directions. A peak shift and broadening was seen at the channeling and near channeling directions compared with the random one. The spectra were also simulated using our modified Monte Carlo calculation method for stopping, range and energy distribution in highly ordered materials. The energy shift and the broadening between the random and the channeling spectra were compared and explained.
ASJC Scopus subject areas
- Nuclear and High Energy Physics