Investigation of Sb diffusion in amorphous silicon

A. Csik, G. A. Langer, G. Erdélyi, D. L. Beke, Z. Erdelyi, K. Vad

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Amorphous silicon materials and its alloys became extensively used in some technical applications involving large area of the microelectronic and optoelectronic devices. However, the amorphous-crystalline transition, segregation and diffusion processes still have numerous unanswered questions. In this work we study the Sb diffusion into an amorphous Si film by means of Secondary Neutral Mass Spectrometry. Amorphous Si/Si1-xSbx/Si tri-layer samples with 5 at% antimony concentration were prepared by direct current magnetron sputtering onto Si substrate at room temperature. Annealing of the samples was performed at different temperatures in vacuum (p<10-7 mbar) and 100 bar high purity (99.999%) Ar pressure. During annealing a rather slow mixing between the Sb-alloyed and the amorphous Si layers was observed. Supposing concentration independent of diffusion, the evaluated diffusion coefficients are in the range of ∼10-21 m2s-1 at 550 °C.

Original languageEnglish
Pages (from-to)257-260
Number of pages4
JournalVacuum
Volume82
Issue number2 SPEC. ISS.
DOIs
Publication statusPublished - Oct 29 2007

Keywords

  • Amorphous SiSb alloy
  • Crystallization
  • Decomposition
  • Segregation

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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