Investigation of rf sputtered CrSiO thin resistor films

M. Czermann, I. Trifonov, G. Katona, O. Geszti, A. Sulyok

Research output: Contribution to journalArticle

Abstract

In our work CrSiO thin film resistors prepared by rf sputtering from 50/50 CrSiO target onto oxidized silica substrates were investigated. These films are used to produce miniature resistor networks, encapsulated in surface mountable plastic houses or chip carriers. The resistor networks have low temperature coefficients and excellent long term stability. We have investigated the influence of the different sputtering parameters (cathode voltage, bias voltage, sputtering rate, sputtering gas pressure, oxygen content and different annealing times and temperatures) on the electrical parameters and the structures of the CrSiO thin films. EOS, AES and TEM were used to determine the composition and structure. It has been found that the structure of the as-deposited film changes from an amorphous to crystalline form depending on the sputtering parameters. The composition of the film differs from the composition of the target and shows a marked dependence on the applied cathode and bias voltage and on the partial pressure of the reactive gas used in the sputtering. The annealing process applied after film deposition does not cause any structural change detectable by our methods, however the electrical parameters (e.g. temperature coefficient, stability) are influenced significantly by the heat treatment.

Original languageEnglish
Pages (from-to)235
Number of pages1
JournalVacuum
Volume40
Issue number1-2
Publication statusPublished - 1990

Fingerprint

resistors
Resistors
Sputtering
sputtering
Bias voltage
electric potential
Cathodes
Gases
cathodes
Chemical analysis
Annealing
Thin films
annealing
coefficients
thin films
Silicon Dioxide
Partial pressure
Temperature
gas pressure
partial pressure

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Czermann, M., Trifonov, I., Katona, G., Geszti, O., & Sulyok, A. (1990). Investigation of rf sputtered CrSiO thin resistor films. Vacuum, 40(1-2), 235.

Investigation of rf sputtered CrSiO thin resistor films. / Czermann, M.; Trifonov, I.; Katona, G.; Geszti, O.; Sulyok, A.

In: Vacuum, Vol. 40, No. 1-2, 1990, p. 235.

Research output: Contribution to journalArticle

Czermann, M, Trifonov, I, Katona, G, Geszti, O & Sulyok, A 1990, 'Investigation of rf sputtered CrSiO thin resistor films', Vacuum, vol. 40, no. 1-2, pp. 235.
Czermann M, Trifonov I, Katona G, Geszti O, Sulyok A. Investigation of rf sputtered CrSiO thin resistor films. Vacuum. 1990;40(1-2):235.
Czermann, M. ; Trifonov, I. ; Katona, G. ; Geszti, O. ; Sulyok, A. / Investigation of rf sputtered CrSiO thin resistor films. In: Vacuum. 1990 ; Vol. 40, No. 1-2. pp. 235.
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