Investigation of multilayer metallisation in a gate array device using cross-sectional transmission electron microscopy

S. F. Gong, H. T.G. Hentzell, A. Robertsson, G. Radnoczi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Cross-sectional transmission electron microscopy (XTEM) was used to investigate structures of a multilayer metallisation of an integrated circuit. Microstructures of thin films, interfaces, interconnections, step coverage and dislocations in the device were revealed. Good step coverage was observed when polyimide was used as an insulator between two metal layers. The results indicate that, with a proper technique of sample preparation, XTEM can be utilised as a unique way to characterise cross-sectional structures of very large scale integrated circuits.

Original languageEnglish
Pages (from-to)53-56
Number of pages4
JournalIEE proceedings. Part G. Electronic circuits and systems
Volume137
Issue number1
DOIs
Publication statusPublished - Jan 1 1990

ASJC Scopus subject areas

  • Engineering(all)

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