Investigation of morphology and fractal behaviour on compound semiconductor surface after electrochemical layer removal

Ákos Nemcsics, Imre Mojzes, László Dobos

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The electrochemical method is a very versatile tool for characterization and processing of compound semiconductors. In this paper we investigate the surface morphology and pattern formation of GaAs and InP surfaces after electrochemical layer removal. Different aqueous HCl based electrolites were used for the layer removal. The investigation of the surface pattern formation was carried out using the box counting method. The pictures of surface patterns were digitised and analysed using high resolution bitmap. The fractal dimension depends on the semiconductor materials, electrolyte and condition of etching, too.

Original languageEnglish
Pages (from-to)1505-1509
Number of pages5
JournalMicroelectronics Reliability
Volume39
Issue number10
DOIs
Publication statusPublished - Oct 1999

Fingerprint

Fractals
fractals
Semiconductor materials
Fractal dimension
Electrolytes
Surface morphology
Etching
boxes
counting
etching
electrolytes
Processing
high resolution
gallium arsenide

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Investigation of morphology and fractal behaviour on compound semiconductor surface after electrochemical layer removal. / Nemcsics, Ákos; Mojzes, Imre; Dobos, László.

In: Microelectronics Reliability, Vol. 39, No. 10, 10.1999, p. 1505-1509.

Research output: Contribution to journalArticle

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