Investigation of ion-implanted semiconductors by ellipsometry and backscattering spectrometry

M. Fried, T. Lohner, E. Jároli, Gy Vizkelethy, G. Mezey, J. Gyulai, M. Somogyi, H. Kerkow

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Ion-implanted silicon and GaP were investigated by ellipsometry and channelling effect measurements to determine the validity of the Bruggeman thoery for partially amorphous layers. It was found that the effective medium approximation (EMA) gives a satisfactory description of the disordered layer for heavy ions and low doses. The thickness of the disordered layer and the degree of amorphousness are independent parameters and can be determined from ellipsometry alone. Low dose nitrogen implantation is cited as an example of the limitations of EMA.

Original languageEnglish
Pages (from-to)191-198
Number of pages8
JournalThin Solid Films
Volume116
Issue number1-3
DOIs
Publication statusPublished - Jun 22 1984

Fingerprint

Ellipsometry
Backscattering
Spectrometry
ellipsometry
backscattering
Ions
Semiconductor materials
Heavy Ions
Silicon
Heavy ions
spectroscopy
dosage
ions
Nitrogen
approximation
implantation
heavy ions
nitrogen
silicon

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Investigation of ion-implanted semiconductors by ellipsometry and backscattering spectrometry. / Fried, M.; Lohner, T.; Jároli, E.; Vizkelethy, Gy; Mezey, G.; Gyulai, J.; Somogyi, M.; Kerkow, H.

In: Thin Solid Films, Vol. 116, No. 1-3, 22.06.1984, p. 191-198.

Research output: Contribution to journalArticle

Fried, M. ; Lohner, T. ; Jároli, E. ; Vizkelethy, Gy ; Mezey, G. ; Gyulai, J. ; Somogyi, M. ; Kerkow, H. / Investigation of ion-implanted semiconductors by ellipsometry and backscattering spectrometry. In: Thin Solid Films. 1984 ; Vol. 116, No. 1-3. pp. 191-198.
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