Investigation of ion implantation-induced damage in the carbon and silicon sublattices of 6H-SiC

Z. Zolnai, N. Q. Khánh, E. Szilágyi, E. Kótai, A. Ster, M. Posselt, T. Lohner, J. Gyulai

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Single crystal 6H-SiC samples were irradiated at room temperature with 200 keV Al+ ions at fluences ranging from 3.5 × 1013 to 2.8 × 1014 ion/cm2. Depth profiles of crystal defects both in the C and Si sublattices were measured by Backscattering Spectrometry combined with channeling technique (BS/C) at 3550 keV 4He+ ion beam energy along the <0001> axial channeling direction. Damage in the carbon sublattice was found to be higher than in the silicon one. Moreover, the C/Si damage ratio decreased with increasing fluence. The crystal defect profiles can be well simulated both by full-cascade SRIM and Crystal-TRIM programs. Effective displacement energies for carbon and silicon sublattices in the applied fluence range of Al implantation were determined by comparing SRIM simulations to BS/C results.

Original languageEnglish
Pages (from-to)1239-1242
Number of pages4
JournalDiamond and Related Materials
Volume11
Issue number3-6
DOIs
Publication statusPublished - Mar 1 2002

Keywords

  • Backscattering spectrometry
  • Defects
  • Ion implantation
  • Silicon carbide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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