Investigation of ion-bombarded and annealed Si by UPS and RBS methods

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Abstract

Si 〈111〉 and Si 〈100〉 were damaged by bombardment with Ar+ and implantation of 31P+ and of 28Si+ ions. The structural disorder and electronic structure were measured in disordered and crystalline states. The ion-implanted (amorphous) surfaces had very different electronic structures in comparison with the crystalline state, but they were nearly equal to each other when the surfaces were bombarded by argon ions, while these surfaces were heavily damaged according to RBS data. The amorphous-crystalline transition process detected by UPS and by RBS was also different for Si 〈111〉 and Si 〈100〉.

Original languageEnglish
Pages (from-to)445-449
Number of pages5
JournalNuclear Instruments and Methods In Physics Research
Volume199
Issue number1-2
DOIs
Publication statusPublished - Aug 1 1982

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