Investigation of GaN/ZnO heterostructures properties

J. Kováč, J. Škriniarová, P. Kúdela, I. Novotný, J. Bruncko, D. Donoval, J. Jakabovič, M. Michalka, J. Lábár, A. Vincze, D. Haško

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on the fabrication and measurement of electrical and optical properties of GaN/ZnO heterostructures. The I-V characteristics of the fabricated diodes revealed the ohmic and rectifying behavior under different conditions of ZnO films deposition. The sputtered ZnO films on n type GaN shows ohmic character and are promising for the transparent contact formation. Formation of p-type ZnO film was find out from measured I-V characteristics of n GaN/ZnO heterostructures prepared by pulsed laser deposition and could be a promising for potential application in optoelectronic devices.

Original languageEnglish
Title of host publicationConference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06
Pages245-248
Number of pages4
DOIs
Publication statusPublished - 2006
Event6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06 - Smolenice Castle, Slovakia
Duration: Oct 16 2006Oct 18 2006

Other

Other6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06
CountrySlovakia
CitySmolenice Castle
Period10/16/0610/18/06

Fingerprint

Heterojunctions
Pulsed laser deposition
Optoelectronic devices
Diodes
Electric properties
Optical properties
Fabrication

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Cite this

Kováč, J., Škriniarová, J., Kúdela, P., Novotný, I., Bruncko, J., Donoval, D., ... Haško, D. (2006). Investigation of GaN/ZnO heterostructures properties. In Conference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06 (pp. 245-248). [4133123] https://doi.org/10.1109/ASDAM.2006.331199

Investigation of GaN/ZnO heterostructures properties. / Kováč, J.; Škriniarová, J.; Kúdela, P.; Novotný, I.; Bruncko, J.; Donoval, D.; Jakabovič, J.; Michalka, M.; Lábár, J.; Vincze, A.; Haško, D.

Conference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06. 2006. p. 245-248 4133123.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kováč, J, Škriniarová, J, Kúdela, P, Novotný, I, Bruncko, J, Donoval, D, Jakabovič, J, Michalka, M, Lábár, J, Vincze, A & Haško, D 2006, Investigation of GaN/ZnO heterostructures properties. in Conference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06., 4133123, pp. 245-248, 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06, Smolenice Castle, Slovakia, 10/16/06. https://doi.org/10.1109/ASDAM.2006.331199
Kováč J, Škriniarová J, Kúdela P, Novotný I, Bruncko J, Donoval D et al. Investigation of GaN/ZnO heterostructures properties. In Conference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06. 2006. p. 245-248. 4133123 https://doi.org/10.1109/ASDAM.2006.331199
Kováč, J. ; Škriniarová, J. ; Kúdela, P. ; Novotný, I. ; Bruncko, J. ; Donoval, D. ; Jakabovič, J. ; Michalka, M. ; Lábár, J. ; Vincze, A. ; Haško, D. / Investigation of GaN/ZnO heterostructures properties. Conference Proceedings - The 6th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM'06. 2006. pp. 245-248
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