A well-defined type of edge dislocation network causing dechanneling of energetic ions aligned along a crystallographic axis has been investigated. Samples used in this study were (111) oriented silicon which were implanted with phosphoros at 50 keV to a dose of 1 × 1016 cm-2, and then annealed. TEM observations reveal that the dislocations are hexagonal in shape and the plane of its hexagonal network is parallel to the sample surface. Channeling measurements show that there is an increase in backscattering yield associated with dechanneling at the dislocations. Our results indicate that the measured dechanneling values agree reasonably well with theoretical calculations based on Quéré's model.
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