Investigation of dislocations by backscattering spectrometry and transmission electron microscopy

W. F. Tseng, J. Gyulai, T. Koji, S. S. Lau, J. Roth, J. W. Mayer

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

A well-defined type of edge dislocation network causing dechanneling of energetic ions aligned along a crystallographic axis has been investigated. Samples used in this study were (111) oriented silicon which were implanted with phosphoros at 50 keV to a dose of 1 × 1016 cm-2, and then annealed. TEM observations reveal that the dislocations are hexagonal in shape and the plane of its hexagonal network is parallel to the sample surface. Channeling measurements show that there is an increase in backscattering yield associated with dechanneling at the dislocations. Our results indicate that the measured dechanneling values agree reasonably well with theoretical calculations based on Quéré's model.

Original languageEnglish
Pages (from-to)615-617
Number of pages3
JournalNuclear Instruments and Methods
Volume149
Issue number1-3
DOIs
Publication statusPublished - 1978

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Edge dislocations
Silicon
Backscattering
Transmission Electron Microscopy
Spectrometry
Spectrum Analysis
Ions
Transmission electron microscopy

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Investigation of dislocations by backscattering spectrometry and transmission electron microscopy. / Tseng, W. F.; Gyulai, J.; Koji, T.; Lau, S. S.; Roth, J.; Mayer, J. W.

In: Nuclear Instruments and Methods, Vol. 149, No. 1-3, 1978, p. 615-617.

Research output: Contribution to journalArticle

Tseng, W. F. ; Gyulai, J. ; Koji, T. ; Lau, S. S. ; Roth, J. ; Mayer, J. W. / Investigation of dislocations by backscattering spectrometry and transmission electron microscopy. In: Nuclear Instruments and Methods. 1978 ; Vol. 149, No. 1-3. pp. 615-617.
@article{c3a4d7786f594a59b218f72f653a6143,
title = "Investigation of dislocations by backscattering spectrometry and transmission electron microscopy",
abstract = "A well-defined type of edge dislocation network causing dechanneling of energetic ions aligned along a crystallographic axis has been investigated. Samples used in this study were (111) oriented silicon which were implanted with phosphoros at 50 keV to a dose of 1 × 1016 cm-2, and then annealed. TEM observations reveal that the dislocations are hexagonal in shape and the plane of its hexagonal network is parallel to the sample surface. Channeling measurements show that there is an increase in backscattering yield associated with dechanneling at the dislocations. Our results indicate that the measured dechanneling values agree reasonably well with theoretical calculations based on Qu{\'e}r{\'e}'s model.",
author = "Tseng, {W. F.} and J. Gyulai and T. Koji and Lau, {S. S.} and J. Roth and Mayer, {J. W.}",
year = "1978",
doi = "10.1016/0029-554X(78)90938-2",
language = "English",
volume = "149",
pages = "615--617",
journal = "Nuclear Instruments and Methods",
issn = "0029-554X",
publisher = "Elsevier BV",
number = "1-3",

}

TY - JOUR

T1 - Investigation of dislocations by backscattering spectrometry and transmission electron microscopy

AU - Tseng, W. F.

AU - Gyulai, J.

AU - Koji, T.

AU - Lau, S. S.

AU - Roth, J.

AU - Mayer, J. W.

PY - 1978

Y1 - 1978

N2 - A well-defined type of edge dislocation network causing dechanneling of energetic ions aligned along a crystallographic axis has been investigated. Samples used in this study were (111) oriented silicon which were implanted with phosphoros at 50 keV to a dose of 1 × 1016 cm-2, and then annealed. TEM observations reveal that the dislocations are hexagonal in shape and the plane of its hexagonal network is parallel to the sample surface. Channeling measurements show that there is an increase in backscattering yield associated with dechanneling at the dislocations. Our results indicate that the measured dechanneling values agree reasonably well with theoretical calculations based on Quéré's model.

AB - A well-defined type of edge dislocation network causing dechanneling of energetic ions aligned along a crystallographic axis has been investigated. Samples used in this study were (111) oriented silicon which were implanted with phosphoros at 50 keV to a dose of 1 × 1016 cm-2, and then annealed. TEM observations reveal that the dislocations are hexagonal in shape and the plane of its hexagonal network is parallel to the sample surface. Channeling measurements show that there is an increase in backscattering yield associated with dechanneling at the dislocations. Our results indicate that the measured dechanneling values agree reasonably well with theoretical calculations based on Quéré's model.

UR - http://www.scopus.com/inward/record.url?scp=0017916807&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0017916807&partnerID=8YFLogxK

U2 - 10.1016/0029-554X(78)90938-2

DO - 10.1016/0029-554X(78)90938-2

M3 - Article

AN - SCOPUS:0017916807

VL - 149

SP - 615

EP - 617

JO - Nuclear Instruments and Methods

JF - Nuclear Instruments and Methods

SN - 0029-554X

IS - 1-3

ER -