Investigation of die-attach degradation using power cycling tests

Zoltan Sarkany, Andras Vass-Varnai, Marta Rencz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This article describes a complex measurement and simulation based characterization method of high current IGBT modules. The method begins with thermal transient tests aimed at the investigation of the thermal behavior of the module and the creation of a thermal map of the heat conduction path using structure functions. This information can later be used for different purposes, such as the calibration of a detailed thermal simulation model of the system or as a reference for later power cycling reliability tests. During this test the degradation of the die attach layer as a result of power cycles is tracked as it is indicated by the structure functions. In the article we demonstrate the steps of this method with a detailed case-study.

Original languageEnglish
Title of host publicationProceedings of the 2013 IEEE 15th Electronics Packaging Technology Conference, EPTC 2013
Pages780-784
Number of pages5
DOIs
Publication statusPublished - Dec 1 2013
Event2013 IEEE 15th Electronics Packaging Technology Conference, EPTC 2013 - Singapore, Singapore
Duration: Dec 11 2013Dec 13 2013

Publication series

NameProceedings of the 2013 IEEE 15th Electronics Packaging Technology Conference, EPTC 2013

Other

Other2013 IEEE 15th Electronics Packaging Technology Conference, EPTC 2013
CountrySingapore
CitySingapore
Period12/11/1312/13/13

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Sarkany, Z., Vass-Varnai, A., & Rencz, M. (2013). Investigation of die-attach degradation using power cycling tests. In Proceedings of the 2013 IEEE 15th Electronics Packaging Technology Conference, EPTC 2013 (pp. 780-784). [6745827] (Proceedings of the 2013 IEEE 15th Electronics Packaging Technology Conference, EPTC 2013). https://doi.org/10.1109/EPTC.2013.6745827