Investigation of density-of-states in TiSi2 compounds

G. Pető, E. Zsoldos, L. Guczi, Z. Schay

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The electronic structure of TiSi and TiSi2 was investigated by means of the energy distribution of photoelectrons emitted from the valence band and core levels. The Ti d-states are dominant at the Fermi level, the Si s-states of both TiSi and TiSi2 were shifted to lower binding energy. The Si p-states are modified having peaks at binding energies 2.7 and 4.2 eV for TiSi2 and 2.8 eV for TiSi but their intensities differ widely. The Si sp-states were not detectable for TiSi and TiSi2 nor was the core level shift for TiSi2.

Original languageEnglish
Pages (from-to)817-819
Number of pages3
JournalSolid State Communications
Volume57
Issue number10
DOIs
Publication statusPublished - 1986

Fingerprint

Core levels
Binding energy
Photoelectrons
Valence bands
binding energy
Fermi level
Electronic structure
energy distribution
photoelectrons
electronic structure
valence
shift

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Investigation of density-of-states in TiSi2 compounds. / Pető, G.; Zsoldos, E.; Guczi, L.; Schay, Z.

In: Solid State Communications, Vol. 57, No. 10, 1986, p. 817-819.

Research output: Contribution to journalArticle

@article{8617a27c3fbb44908fab8216e1d323c9,
title = "Investigation of density-of-states in TiSi2 compounds",
abstract = "The electronic structure of TiSi and TiSi2 was investigated by means of the energy distribution of photoelectrons emitted from the valence band and core levels. The Ti d-states are dominant at the Fermi level, the Si s-states of both TiSi and TiSi2 were shifted to lower binding energy. The Si p-states are modified having peaks at binding energies 2.7 and 4.2 eV for TiSi2 and 2.8 eV for TiSi but their intensities differ widely. The Si sp-states were not detectable for TiSi and TiSi2 nor was the core level shift for TiSi2.",
author = "G. Pető and E. Zsoldos and L. Guczi and Z. Schay",
year = "1986",
doi = "10.1016/0038-1098(86)90183-3",
language = "English",
volume = "57",
pages = "817--819",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "10",

}

TY - JOUR

T1 - Investigation of density-of-states in TiSi2 compounds

AU - Pető, G.

AU - Zsoldos, E.

AU - Guczi, L.

AU - Schay, Z.

PY - 1986

Y1 - 1986

N2 - The electronic structure of TiSi and TiSi2 was investigated by means of the energy distribution of photoelectrons emitted from the valence band and core levels. The Ti d-states are dominant at the Fermi level, the Si s-states of both TiSi and TiSi2 were shifted to lower binding energy. The Si p-states are modified having peaks at binding energies 2.7 and 4.2 eV for TiSi2 and 2.8 eV for TiSi but their intensities differ widely. The Si sp-states were not detectable for TiSi and TiSi2 nor was the core level shift for TiSi2.

AB - The electronic structure of TiSi and TiSi2 was investigated by means of the energy distribution of photoelectrons emitted from the valence band and core levels. The Ti d-states are dominant at the Fermi level, the Si s-states of both TiSi and TiSi2 were shifted to lower binding energy. The Si p-states are modified having peaks at binding energies 2.7 and 4.2 eV for TiSi2 and 2.8 eV for TiSi but their intensities differ widely. The Si sp-states were not detectable for TiSi and TiSi2 nor was the core level shift for TiSi2.

UR - http://www.scopus.com/inward/record.url?scp=0022673866&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022673866&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(86)90183-3

DO - 10.1016/0038-1098(86)90183-3

M3 - Article

VL - 57

SP - 817

EP - 819

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 10

ER -