Investigation of defects created by growth of InAs quantum dots in GaAs

L. Dózsa, Z. Horváth, P. Hubik, J. Kristofik, J. J. Mares, E. Gombia, P. Frigeri, R. Mosca, S. Franchi, B. Pécz, L. Dobos

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Defects created by self-organized InAs quantum dot growth in a GaAs matrix were investigated. Growth of the quantum dots was found to enhance strongly the tendency towards inhomogeneous growth. The inhomogeneity seems to stem from point defect clusters generated in the vicinity of a molecular beam epitaxy (MBE)/atomic layer MBE (ALMBE) interface. The point defects identified are characteristic of MBE and ALMBE GaAs layers. The InAs quantum dot states and interface states are not clearly detected since they are located in a depleted layer surrounding the point defects clusters.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages975-980
Number of pages6
Edition3
DOIs
Publication statusPublished - 2003
Event6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002 - Budapest, Hungary
Duration: May 26 2002May 29 2002

Other

Other6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002
CountryHungary
CityBudapest
Period5/26/025/29/02

Fingerprint

Molecular beam epitaxy
point defects
Semiconductor quantum dots
Point defects
molecular beam epitaxy
quantum dots
Defects
defects
Atomic layer epitaxy
atomic layer epitaxy
stems
Interface states
tendencies
inhomogeneity
matrices
gallium arsenide
indium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Dózsa, L., Horváth, Z., Hubik, P., Kristofik, J., Mares, J. J., Gombia, E., ... Dobos, L. (2003). Investigation of defects created by growth of InAs quantum dots in GaAs. In Physica Status Solidi C: Conferences (3 ed., pp. 975-980) https://doi.org/10.1002/pssc.200306327

Investigation of defects created by growth of InAs quantum dots in GaAs. / Dózsa, L.; Horváth, Z.; Hubik, P.; Kristofik, J.; Mares, J. J.; Gombia, E.; Frigeri, P.; Mosca, R.; Franchi, S.; Pécz, B.; Dobos, L.

Physica Status Solidi C: Conferences. 3. ed. 2003. p. 975-980.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dózsa, L, Horváth, Z, Hubik, P, Kristofik, J, Mares, JJ, Gombia, E, Frigeri, P, Mosca, R, Franchi, S, Pécz, B & Dobos, L 2003, Investigation of defects created by growth of InAs quantum dots in GaAs. in Physica Status Solidi C: Conferences. 3 edn, pp. 975-980, 6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002, Budapest, Hungary, 5/26/02. https://doi.org/10.1002/pssc.200306327
Dózsa L, Horváth Z, Hubik P, Kristofik J, Mares JJ, Gombia E et al. Investigation of defects created by growth of InAs quantum dots in GaAs. In Physica Status Solidi C: Conferences. 3 ed. 2003. p. 975-980 https://doi.org/10.1002/pssc.200306327
Dózsa, L. ; Horváth, Z. ; Hubik, P. ; Kristofik, J. ; Mares, J. J. ; Gombia, E. ; Frigeri, P. ; Mosca, R. ; Franchi, S. ; Pécz, B. ; Dobos, L. / Investigation of defects created by growth of InAs quantum dots in GaAs. Physica Status Solidi C: Conferences. 3. ed. 2003. pp. 975-980
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