Defects created by self-organized InAs quantum dot growth in a GaAs matrix were investigated. Growth of the quantum dots was found to enhance strongly the tendency towards inhomogeneous growth. The inhomogeneity seems to stem from point defect clusters generated in the vicinity of a molecular beam epitaxy (MBE)/atomic layer MBE (ALMBE) interface. The point defects identified are characteristic of MBE and ALMBE GaAs layers. The InAs quantum dot states and interface states are not clearly detected since they are located in a depleted layer surrounding the point defects clusters.
|Number of pages||6|
|Journal||Physica Status Solidi C: Conferences|
|Publication status||Published - Dec 1 2003|
|Event||6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002 - Budapest, Hungary|
Duration: May 26 2002 → May 29 2002
ASJC Scopus subject areas
- Condensed Matter Physics