Investigation of charge collection in a silicon PIN photodiode

Alíz Simon, G. Kalinka

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Ion Beam Induced Charge (IBIC) imaging with a 2 MeV He+ microbeam has been used to investigate spectroscopic features and charge transport properties of a Hamamatsu S1223 silicon PIN photodiode. Pulse height spectra were collected with high lateral resolution at different reverse bias values between 0 V and -100 V. Pulse height maps and median energy maps were generated to observe the spatial variations of charge collection properties. Absolute charge collection efficiency was calculated along a line including the edge structure of the photodiode. Our results show that the charge collection is uniform within the sensitive area of the PIN diode but it is decreasing close to the edges. There are low energy satellite peaks and other structures in the spectra due to energy loss in the edge protecting surface coverages and incomplete charge collection in the near surface and undepleted regions. The investigated effects contribute to the further understanding of the operation of the Si photodiode and similar semiconductor device structures.

Original languageEnglish
Pages (from-to)507-512
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume231
Issue number1-4
DOIs
Publication statusPublished - Apr 2005

Fingerprint

Silicon
Photodiodes
photodiodes
Semiconductor device structures
silicon
pulse amplitude
Transport properties
Ion beams
microbeams
Charge transfer
Energy dissipation
Diodes
semiconductor devices
Satellites
Imaging techniques
energy dissipation
transport properties
ion beams
diodes
energy

Keywords

  • Charge collection efficiency
  • Electronic properties
  • Ion beam induced charge
  • Microbeam
  • Si photodiode

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

@article{4d822c4793c94608bc6a56fcf321e888,
title = "Investigation of charge collection in a silicon PIN photodiode",
abstract = "Ion Beam Induced Charge (IBIC) imaging with a 2 MeV He+ microbeam has been used to investigate spectroscopic features and charge transport properties of a Hamamatsu S1223 silicon PIN photodiode. Pulse height spectra were collected with high lateral resolution at different reverse bias values between 0 V and -100 V. Pulse height maps and median energy maps were generated to observe the spatial variations of charge collection properties. Absolute charge collection efficiency was calculated along a line including the edge structure of the photodiode. Our results show that the charge collection is uniform within the sensitive area of the PIN diode but it is decreasing close to the edges. There are low energy satellite peaks and other structures in the spectra due to energy loss in the edge protecting surface coverages and incomplete charge collection in the near surface and undepleted regions. The investigated effects contribute to the further understanding of the operation of the Si photodiode and similar semiconductor device structures.",
keywords = "Charge collection efficiency, Electronic properties, Ion beam induced charge, Microbeam, Si photodiode",
author = "Al{\'i}z Simon and G. Kalinka",
year = "2005",
month = "4",
doi = "10.1016/j.nimb.2005.01.108",
language = "English",
volume = "231",
pages = "507--512",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Investigation of charge collection in a silicon PIN photodiode

AU - Simon, Alíz

AU - Kalinka, G.

PY - 2005/4

Y1 - 2005/4

N2 - Ion Beam Induced Charge (IBIC) imaging with a 2 MeV He+ microbeam has been used to investigate spectroscopic features and charge transport properties of a Hamamatsu S1223 silicon PIN photodiode. Pulse height spectra were collected with high lateral resolution at different reverse bias values between 0 V and -100 V. Pulse height maps and median energy maps were generated to observe the spatial variations of charge collection properties. Absolute charge collection efficiency was calculated along a line including the edge structure of the photodiode. Our results show that the charge collection is uniform within the sensitive area of the PIN diode but it is decreasing close to the edges. There are low energy satellite peaks and other structures in the spectra due to energy loss in the edge protecting surface coverages and incomplete charge collection in the near surface and undepleted regions. The investigated effects contribute to the further understanding of the operation of the Si photodiode and similar semiconductor device structures.

AB - Ion Beam Induced Charge (IBIC) imaging with a 2 MeV He+ microbeam has been used to investigate spectroscopic features and charge transport properties of a Hamamatsu S1223 silicon PIN photodiode. Pulse height spectra were collected with high lateral resolution at different reverse bias values between 0 V and -100 V. Pulse height maps and median energy maps were generated to observe the spatial variations of charge collection properties. Absolute charge collection efficiency was calculated along a line including the edge structure of the photodiode. Our results show that the charge collection is uniform within the sensitive area of the PIN diode but it is decreasing close to the edges. There are low energy satellite peaks and other structures in the spectra due to energy loss in the edge protecting surface coverages and incomplete charge collection in the near surface and undepleted regions. The investigated effects contribute to the further understanding of the operation of the Si photodiode and similar semiconductor device structures.

KW - Charge collection efficiency

KW - Electronic properties

KW - Ion beam induced charge

KW - Microbeam

KW - Si photodiode

UR - http://www.scopus.com/inward/record.url?scp=33644582621&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644582621&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2005.01.108

DO - 10.1016/j.nimb.2005.01.108

M3 - Article

VL - 231

SP - 507

EP - 512

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-4

ER -