Investigation of CdS/InP heterojunction prepared by chemical bath deposition

V. Rakovics, Zs J. Horváth, Zs E. Horváth, I. Bársony, C. Frigeri, T. Besagni

Research output: Contribution to journalConference article

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Abstract

CdS thin films have been deposited on InP and glass substrates using the chemical bath deposition technique. Baths containing CdSO4, thiourea, and NH3 were used. The temperature of the deposition process was 65 °C and the duration of deposition varied between 20 and 160 minutes. The properties of the CdS/InP heterojuntion were investigated by TEM, EDS and X-ray diffraction. TEM pictures, EDS and X-ray rocking curves indicate the formation of a β-In2S3 transition layer at the InP-CdS interface, wich may reduce the lattice mismatch between InP and CdS.

Original languageEnglish
Pages (from-to)1490-1493
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number4
DOIs
Publication statusPublished - Dec 1 2007
Event8th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC'06 - Cadiz, Spain
Duration: May 14 2006May 17 2006

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ASJC Scopus subject areas

  • Condensed Matter Physics

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