Investigation of aluminium induced crystallisation of amorphous germanium by Auger depth profiling

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Al/a-Ge bilayers prepared by conventional high vacuum evaporation-condensation were investigated by Auger depth profiling and transmission electron microscopy. The samples were deposited onto the substrate held at room temperature and at 220 °C. In the second case metal induced crystallisation of amorphous germanium was observed. According to the earlier developed theory the crystallisation is controlled by Al diffusion. The concentration distribution measured by Auger depth profiling was explained by grain boundary diffusion of Al in polycrystalline Ge. The results support the kinetic model for metal induced crystallisation based on this diffusion theory.

Original languageEnglish
Pages (from-to)227-232
Number of pages6
JournalSolid State Phenomena
Publication statusPublished - Jan 1 1997



  • Amorphous germanium
  • Crystallisation
  • Thin films

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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