Investigation of additional states in the silicon carbide surface after diffusion welding

János Mizsei, Oleg Korolkov, Natalja Sleptsuk, Jana Toompuu, Toomas Rang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper is a summary of the experimental study of deep levels in a SiC crystal lattice caused by diffusion welding (DW). Investigations were carried out by DLTS and Kelvin Probe methods. Investigations revealed that DLTS method is not applicable for identification of surface states. Research conducted by the Kelvin Probe method has shown an increase in the density of surface states after the diffusion welding from 2×10 15 cm -2 to 3.5×10 16 cm -2.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
Pages275-278
Number of pages4
DOIs
Publication statusPublished - May 28 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sep 11 2011Sep 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period9/11/119/16/11

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Keywords

  • DLTS measurements
  • Deep levels
  • Diffusion welding
  • Kelvin probe
  • Surface states

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Mizsei, J., Korolkov, O., Sleptsuk, N., Toompuu, J., & Rang, T. (2012). Investigation of additional states in the silicon carbide surface after diffusion welding. In Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 275-278). (Materials Science Forum; Vol. 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.275