Investigation of acceptor centers in semiconductors with the diamond crystal structure by the μ-SR method

T. N. Mamedov, V. N. Duginov, A. V. Stoykov, I. L. Chaplygin, D. Herlach, U. Zimmermann, V. N. Gorelkin, J. Major, M. Schefzik

Research output: Contribution to journalArticle

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Abstract

The residual polarization of negative muons in crystal silicon samples with phosphorus (P: 1.6×1013 cm-3) and antimony (Sb: 2×1018 cm-3) impurities is investigated. The measurements are made in a 1000 G magnetic field oriented in a direction transverse to the muon spin in the temperature range 4-300 K. The relaxation rate and shift of the precession frequency in the silicon sample with the phosphorus impurity are measured more accurately than previously. It is found that in antimony-doped silicon the acceptor center μAl at temperatures below 30 K can be in both ionized and neutral states. The experimental data are interpreted on the basis of spin-lattice relaxation of the magnetic moment of an acceptor center, formation of acceptor-donor pairs, and recombination of charge carriers at the acceptor. Preliminary measurements showed a nonzero residual polarization of negative muons in germanium.

Original languageEnglish
Pages (from-to)64-70
Number of pages7
JournalJETP Letters
Volume68
Issue number1
DOIs
Publication statusPublished - 1998

Fingerprint

muons
diamonds
antimony
crystal structure
phosphorus
silicon
impurities
polarization
precession
spin-lattice relaxation
charge carriers
germanium
magnetic moments
temperature
shift
magnetic fields
crystals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Mamedov, T. N., Duginov, V. N., Stoykov, A. V., Chaplygin, I. L., Herlach, D., Zimmermann, U., ... Schefzik, M. (1998). Investigation of acceptor centers in semiconductors with the diamond crystal structure by the μ-SR method. JETP Letters, 68(1), 64-70. https://doi.org/10.1134/1.567822

Investigation of acceptor centers in semiconductors with the diamond crystal structure by the μ-SR method. / Mamedov, T. N.; Duginov, V. N.; Stoykov, A. V.; Chaplygin, I. L.; Herlach, D.; Zimmermann, U.; Gorelkin, V. N.; Major, J.; Schefzik, M.

In: JETP Letters, Vol. 68, No. 1, 1998, p. 64-70.

Research output: Contribution to journalArticle

Mamedov, TN, Duginov, VN, Stoykov, AV, Chaplygin, IL, Herlach, D, Zimmermann, U, Gorelkin, VN, Major, J & Schefzik, M 1998, 'Investigation of acceptor centers in semiconductors with the diamond crystal structure by the μ-SR method', JETP Letters, vol. 68, no. 1, pp. 64-70. https://doi.org/10.1134/1.567822
Mamedov TN, Duginov VN, Stoykov AV, Chaplygin IL, Herlach D, Zimmermann U et al. Investigation of acceptor centers in semiconductors with the diamond crystal structure by the μ-SR method. JETP Letters. 1998;68(1):64-70. https://doi.org/10.1134/1.567822
Mamedov, T. N. ; Duginov, V. N. ; Stoykov, A. V. ; Chaplygin, I. L. ; Herlach, D. ; Zimmermann, U. ; Gorelkin, V. N. ; Major, J. ; Schefzik, M. / Investigation of acceptor centers in semiconductors with the diamond crystal structure by the μ-SR method. In: JETP Letters. 1998 ; Vol. 68, No. 1. pp. 64-70.
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AU - Stoykov, A. V.

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AU - Herlach, D.

AU - Zimmermann, U.

AU - Gorelkin, V. N.

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AU - Schefzik, M.

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AB - The residual polarization of negative muons in crystal silicon samples with phosphorus (P: 1.6×1013 cm-3) and antimony (Sb: 2×1018 cm-3) impurities is investigated. The measurements are made in a 1000 G magnetic field oriented in a direction transverse to the muon spin in the temperature range 4-300 K. The relaxation rate and shift of the precession frequency in the silicon sample with the phosphorus impurity are measured more accurately than previously. It is found that in antimony-doped silicon the acceptor center μAl at temperatures below 30 K can be in both ionized and neutral states. The experimental data are interpreted on the basis of spin-lattice relaxation of the magnetic moment of an acceptor center, formation of acceptor-donor pairs, and recombination of charge carriers at the acceptor. Preliminary measurements showed a nonzero residual polarization of negative muons in germanium.

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