Inversion of the direction of photo-induced mass transport in As 20Se80 films: Experiment and theory

Yu Kaganovskii, D. Beke, S. Charnovych, S. Kökényesi, M. L. Trunov

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Abstract

Diffusion mass transfer in thin chalcogenide films under illumination by a focused Gaussian beam have been studied both experimentally and theoretically. It is demonstrated that depending on the light intensity, waist of the beam, and the film thickness, one can obtain formation of either hillocks or dips in the illuminated regions. By comparison of the kinetics of hillock or dip formation on a surface of As20Se80 glass films with the results of our theoretical analysis, we have estimated the photo-induced diffusion coefficients, D, at various light intensities, I, and found D to be proportional to I (D I), with ≈ 1.5 10-18 m4/J.

Original languageEnglish
Article number063502
JournalJournal of Applied Physics
Volume110
Issue number6
DOIs
Publication statusPublished - Sep 15 2011

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luminous intensity
inversions
mass transfer
film thickness
diffusion coefficient
illumination
glass
kinetics
thin films

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Inversion of the direction of photo-induced mass transport in As 20Se80 films : Experiment and theory. / Kaganovskii, Yu; Beke, D.; Charnovych, S.; Kökényesi, S.; Trunov, M. L.

In: Journal of Applied Physics, Vol. 110, No. 6, 063502, 15.09.2011.

Research output: Contribution to journalArticle

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