Interpretation of the depth-dependent etch pit density in InGaAs/GaAs heterostructures

Á Nemcsics, F. Riesz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We study the defect structure of MBE-grown (100) InGaAs/GaAs mismatched heteroepitaxial layers by selective electrochemical (anodic) etching. By incremental layer removal, we map the depth profile of the etch pit density. The defect density is inversely proportional to the layer thickness and increases with In content. The results are explained by a quantitative theoretical model of threading dislocation annihilation. The importance of the layer residual strain in the annihilation process is shown.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages893-896
Number of pages4
Edition3
DOIs
Publication statusPublished - 2003
Event6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002 - Budapest, Hungary
Duration: May 26 2002May 29 2002

Other

Other6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002
CountryHungary
CityBudapest
Period5/26/025/29/02

Fingerprint

Defect structures
Defect density
Molecular beam epitaxy
Heterojunctions
Etching
defects
etching
gallium arsenide
profiles

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Interpretation of the depth-dependent etch pit density in InGaAs/GaAs heterostructures. / Nemcsics, Á; Riesz, F.

Physica Status Solidi C: Conferences. 3. ed. 2003. p. 893-896.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nemcsics, Á & Riesz, F 2003, Interpretation of the depth-dependent etch pit density in InGaAs/GaAs heterostructures. in Physica Status Solidi C: Conferences. 3 edn, pp. 893-896, 6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002, Budapest, Hungary, 5/26/02. https://doi.org/10.1002/pssc.200306226
Nemcsics, Á ; Riesz, F. / Interpretation of the depth-dependent etch pit density in InGaAs/GaAs heterostructures. Physica Status Solidi C: Conferences. 3. ed. 2003. pp. 893-896
@inproceedings{c9e9cdef4c7f4a238c40c9d597e3b588,
title = "Interpretation of the depth-dependent etch pit density in InGaAs/GaAs heterostructures",
abstract = "We study the defect structure of MBE-grown (100) InGaAs/GaAs mismatched heteroepitaxial layers by selective electrochemical (anodic) etching. By incremental layer removal, we map the depth profile of the etch pit density. The defect density is inversely proportional to the layer thickness and increases with In content. The results are explained by a quantitative theoretical model of threading dislocation annihilation. The importance of the layer residual strain in the annihilation process is shown.",
author = "{\'A} Nemcsics and F. Riesz",
year = "2003",
doi = "10.1002/pssc.200306226",
language = "English",
pages = "893--896",
booktitle = "Physica Status Solidi C: Conferences",
edition = "3",

}

TY - GEN

T1 - Interpretation of the depth-dependent etch pit density in InGaAs/GaAs heterostructures

AU - Nemcsics, Á

AU - Riesz, F.

PY - 2003

Y1 - 2003

N2 - We study the defect structure of MBE-grown (100) InGaAs/GaAs mismatched heteroepitaxial layers by selective electrochemical (anodic) etching. By incremental layer removal, we map the depth profile of the etch pit density. The defect density is inversely proportional to the layer thickness and increases with In content. The results are explained by a quantitative theoretical model of threading dislocation annihilation. The importance of the layer residual strain in the annihilation process is shown.

AB - We study the defect structure of MBE-grown (100) InGaAs/GaAs mismatched heteroepitaxial layers by selective electrochemical (anodic) etching. By incremental layer removal, we map the depth profile of the etch pit density. The defect density is inversely proportional to the layer thickness and increases with In content. The results are explained by a quantitative theoretical model of threading dislocation annihilation. The importance of the layer residual strain in the annihilation process is shown.

UR - http://www.scopus.com/inward/record.url?scp=84855980302&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84855980302&partnerID=8YFLogxK

U2 - 10.1002/pssc.200306226

DO - 10.1002/pssc.200306226

M3 - Conference contribution

AN - SCOPUS:84855980302

SP - 893

EP - 896

BT - Physica Status Solidi C: Conferences

ER -