Interpretation and modeling of laser-induced backside wet etching procedure

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Abstract

Laser-induced backside wet etched fused silica surfaces were characterized by X-ray photoelectron spectroscopy (XPS) and ellipsomerty, and a new numerical model was developed to interpret the etching procedure on the basis of our recent results. ArF and KrF lasers were used for etching, while the applied liquid absorbers were naphthalene/methyl-methacrylate and pyrene/acetone solutions. The XPS measurements showed that the completely cleaned, etched fused silica surface layers were contaminated by carbon (which originated from the organic absorber molecules). The optical parameters of the modified layers were measured by spectroscopic ellipsometer. The thicknesses of these carbon contaminated layers were very thin (between 10 and 30 nm), while their absorption co-efficient and the refractive index at 248 nm were between 100 000 and 180 000 cm-1, and 1.85, respectively. Our previous numerical model was completed on the basis of the determined properties of this modified layer, and our results proved that this layer plays key role in the etching procedure.

Original languageEnglish
Pages (from-to)43-47
Number of pages5
JournalJournal of Laser Micro Nanoengineering
Volume5
Issue number1
DOIs
Publication statusPublished - Feb 1 2010

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Keywords

  • Carbon contamination
  • Ellipsomerty
  • Laser-induced backside wet etching
  • Modified layer
  • Numerical model
  • XPS spectroscopy

ASJC Scopus subject areas

  • Instrumentation
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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