Interfacial solid phase reactions in cobalt/aluminum oxide/silicon(001) system

M. Raïssi, S. Vizzini, G. Langer, N. Rochdi, H. Oughaddou, C. Coudreau, S. Nitsche, F. Arnaud D'Avitaya, B. Aufray, J. L. Lazzari

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Auger electron spectroscopy, secondary neutral mass spectrometry and high-resolution transmission electron microscopy were used to assess the chemical, morphological and structural modifications after annealing of cobalt/aluminum oxide/silicon(001) hetero-structure. The results show that the aluminum oxide forms a diffusion barrier for temperatures lower than 200 °C. Beyond this temperature, cobalt atoms diffuse in the silicon region without apparent modification of the barrier. At 340 °C, the asymmetric diffusion could be explained by the formation of an AlCoO complex oxide playing the role of a diffusion barrier for Si atoms.

Original languageEnglish
Pages (from-to)5992-5994
Number of pages3
JournalThin Solid Films
Volume518
Issue number21
DOIs
Publication statusPublished - Aug 31 2010

Fingerprint

cobalt oxides
Diffusion barriers
Aluminum Oxide
Silicon oxides
Silicon
Cobalt
solid phases
aluminum oxides
Aluminum
Atoms
Oxides
silicon
Auger electron spectroscopy
High resolution transmission electron microscopy
Mass spectrometry
Annealing
Temperature
Auger spectroscopy
electron spectroscopy
atoms

Keywords

  • Alumina
  • Annealing
  • Auger Electron Spectroscopy
  • Cobalt
  • Diffusion
  • Metal-Insulator-Semiconductor Structure
  • Reactivity
  • Secondary neutral Mass Spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Raïssi, M., Vizzini, S., Langer, G., Rochdi, N., Oughaddou, H., Coudreau, C., ... Lazzari, J. L. (2010). Interfacial solid phase reactions in cobalt/aluminum oxide/silicon(001) system. Thin Solid Films, 518(21), 5992-5994. https://doi.org/10.1016/j.tsf.2010.05.126

Interfacial solid phase reactions in cobalt/aluminum oxide/silicon(001) system. / Raïssi, M.; Vizzini, S.; Langer, G.; Rochdi, N.; Oughaddou, H.; Coudreau, C.; Nitsche, S.; D'Avitaya, F. Arnaud; Aufray, B.; Lazzari, J. L.

In: Thin Solid Films, Vol. 518, No. 21, 31.08.2010, p. 5992-5994.

Research output: Contribution to journalArticle

Raïssi, M, Vizzini, S, Langer, G, Rochdi, N, Oughaddou, H, Coudreau, C, Nitsche, S, D'Avitaya, FA, Aufray, B & Lazzari, JL 2010, 'Interfacial solid phase reactions in cobalt/aluminum oxide/silicon(001) system', Thin Solid Films, vol. 518, no. 21, pp. 5992-5994. https://doi.org/10.1016/j.tsf.2010.05.126
Raïssi M, Vizzini S, Langer G, Rochdi N, Oughaddou H, Coudreau C et al. Interfacial solid phase reactions in cobalt/aluminum oxide/silicon(001) system. Thin Solid Films. 2010 Aug 31;518(21):5992-5994. https://doi.org/10.1016/j.tsf.2010.05.126
Raïssi, M. ; Vizzini, S. ; Langer, G. ; Rochdi, N. ; Oughaddou, H. ; Coudreau, C. ; Nitsche, S. ; D'Avitaya, F. Arnaud ; Aufray, B. ; Lazzari, J. L. / Interfacial solid phase reactions in cobalt/aluminum oxide/silicon(001) system. In: Thin Solid Films. 2010 ; Vol. 518, No. 21. pp. 5992-5994.
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