Interfacial reactions in GaSb/Co metallization contacts during thermal processing

A. A. Kodentsov, S. L. Markovski, C. Cserháti, F. J J Van Loo

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The utility of thermodynamic potential (activity) diagrams in predicting the reaction zone morphology developed in the GaSb/Co metallization contacts during thermal processing is demonstrated. A number of experiments were designed to test the model. These are aimed at determining phase equilibria in the Ga-Sb-Co system and studying the microstructural evolution of the reaction zone in bulk as well as thin-film diffusion couples. Interfacial reactions between cobalt and single-crystal (001) GaSb have been investigated at 500 °C. No ternary phases exist in the system at this temperature. The cubic CoGa and CoSb3 phases were observed to be dominant growing compounds in the semi-infinite bulk as well as in thin-film reaction couples, the latter intermetallic being formed next to the GaSb substrate. When the Co film is consumed by the reaction, the final configuration of the metallization layer GaSb/CoSb3/CoGa was found. This information is important in designing uniform, stable contacts for the metallization of gallium antimonide.

Original languageEnglish
Pages (from-to)218-224
Number of pages7
JournalChemistry of Materials
Volume15
Issue number1
DOIs
Publication statusPublished - Jan 14 2003

Fingerprint

Metallizing
Surface chemistry
Thin films
Gallium
Microstructural evolution
Cobalt
Phase equilibria
Intermetallics
Single crystals
Thermodynamics
Substrates
Experiments
Temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Materials Chemistry

Cite this

Interfacial reactions in GaSb/Co metallization contacts during thermal processing. / Kodentsov, A. A.; Markovski, S. L.; Cserháti, C.; Van Loo, F. J J.

In: Chemistry of Materials, Vol. 15, No. 1, 14.01.2003, p. 218-224.

Research output: Contribution to journalArticle

Kodentsov, A. A. ; Markovski, S. L. ; Cserháti, C. ; Van Loo, F. J J. / Interfacial reactions in GaSb/Co metallization contacts during thermal processing. In: Chemistry of Materials. 2003 ; Vol. 15, No. 1. pp. 218-224.
@article{70e516d7f11246f4bdd93e9ce2d1a82a,
title = "Interfacial reactions in GaSb/Co metallization contacts during thermal processing",
abstract = "The utility of thermodynamic potential (activity) diagrams in predicting the reaction zone morphology developed in the GaSb/Co metallization contacts during thermal processing is demonstrated. A number of experiments were designed to test the model. These are aimed at determining phase equilibria in the Ga-Sb-Co system and studying the microstructural evolution of the reaction zone in bulk as well as thin-film diffusion couples. Interfacial reactions between cobalt and single-crystal (001) GaSb have been investigated at 500 °C. No ternary phases exist in the system at this temperature. The cubic CoGa and CoSb3 phases were observed to be dominant growing compounds in the semi-infinite bulk as well as in thin-film reaction couples, the latter intermetallic being formed next to the GaSb substrate. When the Co film is consumed by the reaction, the final configuration of the metallization layer GaSb/CoSb3/CoGa was found. This information is important in designing uniform, stable contacts for the metallization of gallium antimonide.",
author = "Kodentsov, {A. A.} and Markovski, {S. L.} and C. Cserh{\'a}ti and {Van Loo}, {F. J J}",
year = "2003",
month = "1",
day = "14",
doi = "10.1021/cm021265a",
language = "English",
volume = "15",
pages = "218--224",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "American Chemical Society",
number = "1",

}

TY - JOUR

T1 - Interfacial reactions in GaSb/Co metallization contacts during thermal processing

AU - Kodentsov, A. A.

AU - Markovski, S. L.

AU - Cserháti, C.

AU - Van Loo, F. J J

PY - 2003/1/14

Y1 - 2003/1/14

N2 - The utility of thermodynamic potential (activity) diagrams in predicting the reaction zone morphology developed in the GaSb/Co metallization contacts during thermal processing is demonstrated. A number of experiments were designed to test the model. These are aimed at determining phase equilibria in the Ga-Sb-Co system and studying the microstructural evolution of the reaction zone in bulk as well as thin-film diffusion couples. Interfacial reactions between cobalt and single-crystal (001) GaSb have been investigated at 500 °C. No ternary phases exist in the system at this temperature. The cubic CoGa and CoSb3 phases were observed to be dominant growing compounds in the semi-infinite bulk as well as in thin-film reaction couples, the latter intermetallic being formed next to the GaSb substrate. When the Co film is consumed by the reaction, the final configuration of the metallization layer GaSb/CoSb3/CoGa was found. This information is important in designing uniform, stable contacts for the metallization of gallium antimonide.

AB - The utility of thermodynamic potential (activity) diagrams in predicting the reaction zone morphology developed in the GaSb/Co metallization contacts during thermal processing is demonstrated. A number of experiments were designed to test the model. These are aimed at determining phase equilibria in the Ga-Sb-Co system and studying the microstructural evolution of the reaction zone in bulk as well as thin-film diffusion couples. Interfacial reactions between cobalt and single-crystal (001) GaSb have been investigated at 500 °C. No ternary phases exist in the system at this temperature. The cubic CoGa and CoSb3 phases were observed to be dominant growing compounds in the semi-infinite bulk as well as in thin-film reaction couples, the latter intermetallic being formed next to the GaSb substrate. When the Co film is consumed by the reaction, the final configuration of the metallization layer GaSb/CoSb3/CoGa was found. This information is important in designing uniform, stable contacts for the metallization of gallium antimonide.

UR - http://www.scopus.com/inward/record.url?scp=0037435581&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037435581&partnerID=8YFLogxK

U2 - 10.1021/cm021265a

DO - 10.1021/cm021265a

M3 - Article

AN - SCOPUS:0037435581

VL - 15

SP - 218

EP - 224

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 1

ER -