Interfacial reactions in GaSb/Co metallization contacts during thermal processing

A. A. Kodentsov, S. L. Markovski, C. Cserháti, F. J.J. Van Loo

Research output: Contribution to journalArticle

3 Citations (Scopus)


The utility of thermodynamic potential (activity) diagrams in predicting the reaction zone morphology developed in the GaSb/Co metallization contacts during thermal processing is demonstrated. A number of experiments were designed to test the model. These are aimed at determining phase equilibria in the Ga-Sb-Co system and studying the microstructural evolution of the reaction zone in bulk as well as thin-film diffusion couples. Interfacial reactions between cobalt and single-crystal (001) GaSb have been investigated at 500 °C. No ternary phases exist in the system at this temperature. The cubic CoGa and CoSb3 phases were observed to be dominant growing compounds in the semi-infinite bulk as well as in thin-film reaction couples, the latter intermetallic being formed next to the GaSb substrate. When the Co film is consumed by the reaction, the final configuration of the metallization layer GaSb/CoSb3/CoGa was found. This information is important in designing uniform, stable contacts for the metallization of gallium antimonide.

Original languageEnglish
Pages (from-to)218-224
Number of pages7
JournalChemistry of Materials
Issue number1
Publication statusPublished - Jan 14 2003

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Interfacial reactions in GaSb/Co metallization contacts during thermal processing'. Together they form a unique fingerprint.

  • Cite this