Interfacial reaction and phase growth for various metal/amorphous silicon system

Zoltan Balogh, Mohammed Ibrahim, Alexander B. Fuhrich, Bence Parditka, Ralf Schlesiger, Patrick Stender, Zoltán Erdélyi, Guido Schmitz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The practical importance of the reactions between a semiconductor and a metal system cannot be overstated. Fundamental physics itself offers also a wide variety of interesting phenomena. Unlike the "clean" metal-metal reactions nucleation or interface control is observed for some metal-silicon reactions. In this work we show our results for bi- and trilayered Al/a-Si, Cu/a-Si and Ni/a-Si model system. Our main investigation method was atom probe tomography, which allowed the local nanoscale investigation of the interfaces. Both the Cu- and Ni-Si system is characterized by a strong asymmetry in respect to the stacking order. The metal on Si transition was much broader and this allowed an almost instantaneous nucleation of the product phase. The Si on metal interface remained sharp and a considerable annealing time was required for the appearance of the phase. The subsequent growth of the Cu3Si layer followed a linear kinetics.

Original languageEnglish
Title of host publicationTMS 2014 - 143rd Annual Meeting and Exhibition, Supplemental Proceedings
PublisherMinerals, Metals and Materials Society
Pages1049-1056
Number of pages8
ISBN (Print)9781118889725
DOIs
Publication statusPublished - 2014
Event143rd Annual Meeting and Exhibition, TMS 2014 - San Diego, CA, United States
Duration: Feb 16 2014Feb 20 2014

Publication series

NameTMS Annual Meeting

Other

Other143rd Annual Meeting and Exhibition, TMS 2014
CountryUnited States
CitySan Diego, CA
Period2/16/142/20/14

Keywords

  • Atom probe tomography
  • Metal-silicon reactions
  • Nucleation
  • Thin films

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys

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  • Cite this

    Balogh, Z., Ibrahim, M., Fuhrich, A. B., Parditka, B., Schlesiger, R., Stender, P., Erdélyi, Z., & Schmitz, G. (2014). Interfacial reaction and phase growth for various metal/amorphous silicon system. In TMS 2014 - 143rd Annual Meeting and Exhibition, Supplemental Proceedings (pp. 1049-1056). (TMS Annual Meeting). Minerals, Metals and Materials Society. https://doi.org/10.1002/9781118889879.ch124