Instability of electrical characteristics of GaAs/InAs quantum dot structures

L. Dózsa, Z. Horváth, E. Gombia, R. Mosca, S. Franchi, P. Frigeri, V. Raineri, F. Giannazo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report on GaAs samples containing an InAs quantum dot matrix grown from 3 monolayers of InAs. In this case, most of the mechanical stress relaxes by misfit dislocations. Capacitance measurements have been performed on macroscopic devices and, also, from a scanning microscope in which the capacitance is measured between the probe and sample surface. It was found that the electrical characteristics dramatically change during the capacitance measurements. This is explained by a degradation of the quantum dot layer which is attributed to the generation of point defects and/or dislocations. These results draw attention to the fact that, at the microscopic scale measurement, a small current may result in a large local current density which, in turn, degrades the device.

Original languageEnglish
Title of host publicationPhysica Status Solidi C: Conferences
Pages1342-1346
Number of pages5
Volume2
Edition4
DOIs
Publication statusPublished - 2005

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capacitance
quantum dots
point defects
microscopes
current density
degradation
scanning
probes
matrices

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Dózsa, L., Horváth, Z., Gombia, E., Mosca, R., Franchi, S., Frigeri, P., ... Giannazo, F. (2005). Instability of electrical characteristics of GaAs/InAs quantum dot structures. In Physica Status Solidi C: Conferences (4 ed., Vol. 2, pp. 1342-1346) https://doi.org/10.1002/pssc.200460449

Instability of electrical characteristics of GaAs/InAs quantum dot structures. / Dózsa, L.; Horváth, Z.; Gombia, E.; Mosca, R.; Franchi, S.; Frigeri, P.; Raineri, V.; Giannazo, F.

Physica Status Solidi C: Conferences. Vol. 2 4. ed. 2005. p. 1342-1346.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dózsa, L, Horváth, Z, Gombia, E, Mosca, R, Franchi, S, Frigeri, P, Raineri, V & Giannazo, F 2005, Instability of electrical characteristics of GaAs/InAs quantum dot structures. in Physica Status Solidi C: Conferences. 4 edn, vol. 2, pp. 1342-1346. https://doi.org/10.1002/pssc.200460449
Dózsa L, Horváth Z, Gombia E, Mosca R, Franchi S, Frigeri P et al. Instability of electrical characteristics of GaAs/InAs quantum dot structures. In Physica Status Solidi C: Conferences. 4 ed. Vol. 2. 2005. p. 1342-1346 https://doi.org/10.1002/pssc.200460449
Dózsa, L. ; Horváth, Z. ; Gombia, E. ; Mosca, R. ; Franchi, S. ; Frigeri, P. ; Raineri, V. ; Giannazo, F. / Instability of electrical characteristics of GaAs/InAs quantum dot structures. Physica Status Solidi C: Conferences. Vol. 2 4. ed. 2005. pp. 1342-1346
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