InP Schottky structures with Pt nanoparticles

Research output: Contribution to journalConference article

Abstract

The electrical characteristics of p-type Au/InP Schottky junctions with Pt nanoparticles sandwiched in the epitaxial layer are studied and compared with reference samples. Different anomalies are obtained, some of them are similar to the behaviour of quantum dot structures. However, it is concluded that the obtained electrical anomalies are connected with defects originated from the break of the epitaxial layer during preparation.

Original languageEnglish
Pages (from-to)200-204
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5136
Publication statusPublished - Dec 1 2002
EventSolid State Crytals 2002 Crystalline Materials for Optoelectronics - Zakopane, Poland
Duration: Oct 14 2002Oct 18 2002

Keywords

  • Anomalies
  • Defects
  • Electrical characteristics
  • Field emission
  • InP Schottky junction
  • Pt nanoparticles
  • Thermionic-field emission

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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