InP Schottky junctions for zero bias detector diodes

Zs J. Horváth, V. Rakovics, B. Szentpáli, S. Püspöki, K. Žd'ánský

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

Cr+Au and Ag Schottky diodes were prepared on n-type InP by using HF or Na2S+HF surface treatment for zero bias microwave detector purposes. The diodes were studied by current-voltage and capacitance-voltage measurements in the temperature range of 80-320K. The obtained I-V barrier heights were in the range of 0.38-0.49eV with ideality factors of 1.08-1.24. The peculiarities of the current-voltage characteristics are interpreted in terms of the thermionic emission, the thermionic-field emission, and the field emission current mechanisms.

Original languageEnglish
Pages (from-to)113-116
Number of pages4
JournalVacuum
Volume71
Issue number1-2 SPEC.
DOIs
Publication statusPublished - May 9 2003

Keywords

  • Current mechanisms
  • InP
  • Schottky junction
  • Temperature dependence

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'InP Schottky junctions for zero bias detector diodes'. Together they form a unique fingerprint.

  • Cite this

    Horváth, Z. J., Rakovics, V., Szentpáli, B., Püspöki, S., & Žd'ánský, K. (2003). InP Schottky junctions for zero bias detector diodes. Vacuum, 71(1-2 SPEC.), 113-116. https://doi.org/10.1016/S0042-207X(02)00723-6