Initial stage of graphene growth on a Cu substrate

Chanyong Hwang, K. Yoo, S. J. Kim, E. K. Seo, H. Yu, L. Bíró

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

The growth of graphene on copper foil has attracted attention in the last two years due to its feasibility for a controllable growth process. One of the key issues remaining for practical application of graphene in solid-state devices is growth with a large grain size. Because the C-C bond in graphene is strong enough to prevent the evaporation-condensation process, Smoluchowski ripening is expected to be the dominant process for coalescence. In this article, we present the initial growth process of graphene on a Cu foil via the chemical vapor deposition method by using secondary electron microscopy and Raman microscopy. In contrast to the other transition-metal substrates, such as Ir and Rh, the center of graphene islands binds to the substrate more rigidly than the edge. For the growth with a large grain size, the graphene should be grown on a substrate with a low diffusion barrier for the carbon clusters (or islands) with low flux; this is the controlling parameter for the grain size. In addition, high-temperature growth (or annealing) generally becomes a dominant condition for the completion of graphene growth with large grains after the coalescence.

Original languageEnglish
Pages (from-to)22369-22374
Number of pages6
JournalJournal of Physical Chemistry C
Volume115
Issue number45
DOIs
Publication statusPublished - Nov 17 2011

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Graphite
Graphene
graphene
Substrates
grain size
Coalescence
coalescing
Metal foil
foils
Carbon clusters
Solid state devices
solid state devices
Diffusion barriers
Growth temperature
Electron microscopy
Transition metals
Copper
Chemical vapor deposition
Condensation
electron microscopy

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Energy(all)

Cite this

Initial stage of graphene growth on a Cu substrate. / Hwang, Chanyong; Yoo, K.; Kim, S. J.; Seo, E. K.; Yu, H.; Bíró, L.

In: Journal of Physical Chemistry C, Vol. 115, No. 45, 17.11.2011, p. 22369-22374.

Research output: Contribution to journalArticle

Hwang, C, Yoo, K, Kim, SJ, Seo, EK, Yu, H & Bíró, L 2011, 'Initial stage of graphene growth on a Cu substrate', Journal of Physical Chemistry C, vol. 115, no. 45, pp. 22369-22374. https://doi.org/10.1021/jp205980d
Hwang, Chanyong ; Yoo, K. ; Kim, S. J. ; Seo, E. K. ; Yu, H. ; Bíró, L. / Initial stage of graphene growth on a Cu substrate. In: Journal of Physical Chemistry C. 2011 ; Vol. 115, No. 45. pp. 22369-22374.
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